All MOSFET. 2SJ661-1E Datasheet

 

2SJ661-1E Datasheet and Replacement


   Type Designator: 2SJ661-1E
   Marking Code: J661
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 65 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(off)|ⓘ - Minimum Gate-to-Source Cutoff Voltage: 1.2 V
   |Id| ⓘ - Maximum Drain Current: 38 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 80 nC
   tr ⓘ - Rise Time: 285 nS
   Cossⓘ - Output Capacitance: 470 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.039 Ohm
   Package: TO262
 

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2SJ661-1E Datasheet (PDF)

 ..1. Size:283K  onsemi
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2SJ661-1E

Ordering number : EN8586A2SJ661P-Channel Power MOSFEThttp://onsemi.com 60V, 38A, 39m , TO-262-3L/TO-263-2LFeatures ON-resistance RDS(on)1=29.5m (typ.) Input capacitance Ciss=4360pF (typ.) 4V driveSpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS --60 VGate-to-Source Voltage

 8.1. Size:38K  sanyo
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2SJ661-1E

Ordering number : EN8586 2SJ661P-Channel Silicon MOSFETGeneral-Purpose Switching Device2SJ661ApplicationsFeatures Low ON-resistance. Ultrahigh-speed switching. 4V drive. Motor drive, DC / DC converter. Avalanche resistance guarantee.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS --

 8.2. Size:373K  onsemi
 2sj661.pdf pdf_icon

2SJ661-1E

Ordering number : EN8586A2SJ661P-Channel Power MOSFEThttp://onsemi.com 60V, 38A, 39m , TO-262-3L/TO-263-2LFeatures ON-resistance RDS(on)1=29.5m (typ.) Input capacitance Ciss=4360pF (typ.) 4V driveSpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS --60 VGate-to-Source Voltage

 9.1. Size:209K  toshiba
 2sj669.pdf pdf_icon

2SJ661-1E

2SJ669 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (U-MOS III) 2SJ669 Relay Drive, DC/DC Converter and Motor Drive Unit: mmApplications 4-V gate drive Low drain-source ON-resistance: RDS (ON) = 0.12 (typ.) High forward transfer admittance: |Yfs| = 5.0 S (typ.) Low leakage current: IDSS = -100 A (max) (VDS = -60 V) Enhancement mode: Vth = -0.8

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Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

History: IRFS231 | STP8NA50

Keywords - 2SJ661-1E MOSFET datasheet

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