2SJ661-1E MOSFET PDF: P-Ch, 60V, 38A. Datasheet. Full specification with pinout and replacement list

2SJ661-1E Specs and Replacement

   Type Designator: 2SJ661-1E
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 65 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 38 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 285 nS
   Cossⓘ - Output Capacitance: 470 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.039 Ohm
   Package: TO262

2SJ661-1E substitution

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2SJ661-1E datasheet

..1. Size:283K onsemi
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Ordering number EN8586A 2SJ661 P-Channel Power MOSFET http //onsemi.com 60V, 38A, 39m , TO-262-3L/TO-263-2L Features ON-resistance RDS(on)1=29.5m (typ.) Input capacitance Ciss=4360pF (typ.) 4V drive Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS --60 V Gate-to-Source Voltage ... See More ⇒

8.1. Size:38K sanyo
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Ordering number EN8586 2SJ661 P-Channel Silicon MOSFET General-Purpose Switching Device 2SJ661 Applications Features Low ON-resistance. Ultrahigh-speed switching. 4V drive. Motor drive, DC / DC converter. Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS --... See More ⇒

8.2. Size:373K onsemi
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9.1. Size:209K toshiba
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2SJ669 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (U-MOS III) 2SJ669 Relay Drive, DC/DC Converter and Motor Drive Unit mm Applications 4-V gate drive Low drain-source ON-resistance RDS (ON) = 0.12 (typ.) High forward transfer admittance Yfs = 5.0 S (typ.) Low leakage current IDSS = -100 A (max) (VDS = -60 V) Enhancement mode Vth = -0.8 ... See More ⇒