2SJ176 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SJ176

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 30 W

Tensión drenaje-fuente (Vds): 60 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 15 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tiempo de elevación (tr): 120 nS

Conductancia de drenaje-sustrato (Cd): 720 pF

Resistencia drenaje-fuente RDS(on): 0.11 Ohm

Empaquetado / Estuche: TO220FM

Búsqueda de reemplazo de MOSFET 2SJ176

2SJ176 Datasheet (PDF)

1.1. 2sj176.pdf Size:273K _upd

5.1. 2sj174.pdf Size:575K _upd

5.2. 2sj173.pdf Size:61K _upd

5.3. 2sj172.pdf Size:42K _upd

2SJ172 Silicon P-Channel MOS FET November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device  Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive Outline TO-220AB 1 D 2 3 1. Gate G 2. Drain (Flange) 3. Source S 2

5.4. 2sj177.pdf Size:29K _upd

2SJ177 Silicon P-Channel MOS FET November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device  Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive Outline TO-220FM D 1 2 3 1. Gate G 2. Drain 3. Source S 2SJ177 Abso

5.5. 2sj170.pdf Size:193K _update-mosfet

INCHANGE Semiconductor isc P-Channel MOSFET Transistor 2SJ170 DESCRIPTION ·Low Drain-Source ON Resistance ·High Forward Transfer Admittance ·Low Leakage Current ·Enhancement-Mode ·Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS ·High speed switching application ·Switching regulator ,DC-DC converter and Motor drive application

5.6. 2sj171.pdf Size:193K _update-mosfet

INCHANGE Semiconductor isc P-Channel MOSFET Transistor 2SJ171 DESCRIPTION ·Low Drain-Source ON Resistance ·High Forward Transfer Admittance ·Low Leakage Current ·Enhancement-Mode ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High speed switching application ·Switching regulator ,DC-DC converter and Motor drive application A

5.7. 2sj178.pdf Size:399K _nec

5.8. 2sj179.pdf Size:320K _nec

5.9. 2sj169 2sj170.pdf Size:119K _hitachi

5.10. 2sj175.pdf Size:29K _hitachi

2SJ175 Silicon P-Channel MOS FET November 1996 Application High speed power switching Features � Low on-resistance � High speed switching � Low drive current � 4 V gate drive device ? Can be driven from 5 V source � Suitable for motor drive, DC-DC converter, power switch and solenoid drive Outline TO-220FM D 1 2 3 1. Gate G 2. Drain 3. Source S 2SJ175 Absolute Maximum Ra

5.11. 2sj179.pdf Size:1334K _kexin

SMD Type MOSFET P-Channel MOSFET 2SJ179 1.70 0.1 ■ Features ● VDS (V) =-30V ● ID =-1.5 A (VGS =-10V) ● RDS(ON) ＜ 1Ω (VGS =-10V) 0.42 0.1 0.46 0.1 ● RDS(ON) ＜ 1.5Ω (VGS =-4V) 1.Gate 2.Drain 3.Source ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Drain-Source Voltage VDS -30 V Gate-Source Voltage VGS ±20 Continuous Drain Current ID

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

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