2SJ176 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SJ176
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pd): 30 W
Tensión drenaje-fuente (Vds): 60 V
Tensión compuerta-fuente (Vgs): 20 V
Corriente continua de drenaje (Id): 15 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tiempo de elevación (tr): 120 nS
Conductancia de drenaje-sustrato (Cd): 720 pF
Resistencia drenaje-fuente RDS(on): 0.11 Ohm
Empaquetado / Estuche: TO220FM
Búsqueda de reemplazo de MOSFET 2SJ176
2SJ176 Datasheet (PDF)
1.1. 2sj176.pdf 
Size:273K _upd
5.1. 2sj172.pdf Size:42K _upd
2SJ172 Silicon P-Channel MOS FET November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive Outline TO-220AB 1 D 2 3 1. Gate G 2. Drain (Flange) 3. Source S 2
5.2. 2sj174.pdf Size:575K _upd
5.3. 2sj173.pdf Size:61K _upd
5.4. 2sj177.pdf Size:29K _upd
2SJ177 Silicon P-Channel MOS FET November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive Outline TO-220FM D 1 2 3 1. Gate G 2. Drain 3. Source S 2SJ177 Abso
5.5. 2sj178.pdf Size:399K _nec
5.6. 2sj179.pdf Size:320K _nec
5.7. 2sj175.pdf Size:29K _hitachi
2SJ175 Silicon P-Channel MOS FET November 1996 Application High speed power switching Features Low on-resistance High speed switching Low drive current 4 V gate drive device ? Can be driven from 5 V source Suitable for motor drive, DC-DC converter, power switch and solenoid drive Outline TO-220FM D 1 2 3 1. Gate G 2. Drain 3. Source S 2SJ175 Absolute Maximum Ra
5.8. 2sj169 2sj170.pdf Size:119K _hitachi
Powered by ICminer.com Electronic-Library Service CopyRight 2003 Powered by ICminer.com Electronic-Library Service CopyRight 2003 Powered by ICminer.com Electronic-Library Service CopyRight 2003
5.9. 2sj179.pdf Size:1334K _kexin
SMD Type MOSFET P-Channel MOSFET 2SJ179 1.70 0.1 ■ Features ● VDS (V) =-30V ● ID =-1.5 A (VGS =-10V) ● RDS(ON) ＜ 1Ω (VGS =-10V) 0.42 0.1 0.46 0.1 ● RDS(ON) ＜ 1.5Ω (VGS =-4V) 1.Gate 2.Drain 3.Source ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Drain-Source Voltage VDS -30 V Gate-Source Voltage VGS ±20 Continuous Drain Current ID
Otros transistores... IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRFP354 , IRFP360 , IRFP360LC , IRFP3710 , J111 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP441 , IRFP442 , IRFP443 .
