All MOSFET. 2SJ176 Datasheet

 

2SJ176 MOSFET. Datasheet pdf. Equivalent

Type Designator: 2SJ176

Type of Transistor: MOSFET

Type of Control Channel: P -Channel

Maximum Power Dissipation (Pd): 30 W

Maximum Drain-Source Voltage |Vds|: 60 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Drain Current |Id|: 15 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 120 nS

Drain-Source Capacitance (Cd): 720 pF

Maximum Drain-Source On-State Resistance (Rds): 0.11 Ohm

Package: TO220FM

2SJ176 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

2SJ176 Datasheet (PDF)

1.1. 2sj176.pdf Size:273K _upd

2SJ176
2SJ176



5.1. 2sj172.pdf Size:42K _upd

2SJ176
2SJ176

2SJ172 Silicon P-Channel MOS FET November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device  Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive Outline TO-220AB 1 D 2 3 1. Gate G 2. Drain (Flange) 3. Source S 2

5.2. 2sj174.pdf Size:575K _upd

2SJ176
2SJ176



 5.3. 2sj173.pdf Size:61K _upd

2SJ176



5.4. 2sj177.pdf Size:29K _upd

2SJ176
2SJ176

2SJ177 Silicon P-Channel MOS FET November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device  Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive Outline TO-220FM D 1 2 3 1. Gate G 2. Drain 3. Source S 2SJ177 Abso

 5.5. 2sj178.pdf Size:399K _nec

2SJ176
2SJ176

5.6. 2sj179.pdf Size:320K _nec

2SJ176
2SJ176

5.7. 2sj175.pdf Size:29K _hitachi

2SJ176
2SJ176

2SJ175 Silicon P-Channel MOS FET November 1996 Application High speed power switching Features Low on-resistance High speed switching Low drive current 4 V gate drive device ? Can be driven from 5 V source Suitable for motor drive, DC-DC converter, power switch and solenoid drive Outline TO-220FM D 1 2 3 1. Gate G 2. Drain 3. Source S 2SJ175 Absolute Maximum Ra

5.8. 2sj169 2sj170.pdf Size:119K _hitachi

2SJ176
2SJ176

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5.9. 2sj179.pdf Size:1334K _kexin

2SJ176
2SJ176

SMD Type MOSFET P-Channel MOSFET 2SJ179 1.70 0.1 ■ Features ● VDS (V) =-30V ● ID =-1.5 A (VGS =-10V) ● RDS(ON) < 1Ω (VGS =-10V) 0.42 0.1 0.46 0.1 ● RDS(ON) < 1.5Ω (VGS =-4V) 1.Gate 2.Drain 3.Source ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Drain-Source Voltage VDS -30 V Gate-Source Voltage VGS ±20 Continuous Drain Current ID

Datasheet: NTF5P03T3 , NTF6P02 , NTGD1100L , NTGD3148N , NTGD4161P , NTGD4167C , NTGS3130N , NTGS3136P , IRF540N , NTGS3441 , NTGS3443 , NTGS3446 , NTGS3455 , NTGS4111P , NTGS4141N , NTGS5120P , NTHC5513 .

 
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