2SJ177 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SJ177
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 35 W
Voltaje máximo drenador - fuente |Vds|: 60 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 20 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 2.5 V
Voltaje de corte de la puerta |Vgs(off)|: 1 V
Tiempo de subida (tr): 125 nS
Conductancia de drenaje-sustrato (Cd): 990 pF
Resistencia entre drenaje y fuente RDS(on): 0.085 Ohm
Paquete / Cubierta: TO220FM
Búsqueda de reemplazo de MOSFET 2SJ177
2SJ177 Datasheet (PDF)
2sj177.pdf
2SJ177Silicon P-Channel MOS FETNovember 1996ApplicationHigh speed power switchingFeatures Low on-resistance High speed switching Low drive current 4 V gate drive device Can be driven from 5 V source Suitable for motor drive, DC-DC converter, power switch and solenoid driveOutlineTO-220FMD1231. Gate G2. Drain 3. SourceS2SJ177Abso
2sj177.pdf
2SJ177www.VBsemi.twP-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () Max. ID (A) Qg (Typ.)Definition TrenchFET Power MOSFET0.050 at VGS = - 10 V- 30- 60 67 100 % Rg and UIS Tested0.060 at VGS = - 4.5 V - 24 Compliant to RoHS Directive 2002/95/ECTO-220 FULLPAK SGS DDGP-Channel MO
2sj169 2sj170.pdf
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2sj172.pdf
2SJ172Silicon P-Channel MOS FETNovember 1996ApplicationHigh speed power switchingFeatures Low on-resistance High speed switching Low drive current 4 V gate drive device Can be driven from 5 V source Suitable for motor drive, DC-DC converter, power switch and solenoid driveOutlineTO-220AB1D231. Gate G2. Drain (Flange) 3. SourceS2
2sj175.pdf
2SJ175Silicon P-Channel MOS FETNovember 1996ApplicationHigh speed power switchingFeatures Low on-resistance High speed switching Low drive current 4 V gate drive device Can be driven from 5 V source Suitable for motor drive, DC-DC converter, power switch and solenoid driveOutlineTO-220FMD1231. Gate G2. Drain 3. SourceS2SJ175Abso
2sj179.pdf
SMD Type MOSFETP-Channel MOSFET2SJ1791.70 0.1 Features VDS (V) =-30V ID =-1.5 A (VGS =-10V) RDS(ON) 1 (VGS =-10V)0.42 0.10.46 0.1 RDS(ON) 1.5 (VGS =-4V)1.Gate2.Drain3.Source Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS -30V Gate-Source Voltage VGS 20 Continuous Drain Current ID
2sj179.pdf
2SJ179www.VBsemi.twP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)d Qg (Typ.)Definition0.050 at VGS = - 10 V - 7.6 TrenchFET Power MOSFET- 30 13 nC 100 % Rg Tested0.056 at VGS = - 4.5 V - 6.0APPLICATIONS Load Switch Battery SwitchDS G G D SD P-Channel MOSFET ABSOL
2sj170.pdf
INCHANGE Semiconductorisc P-Channel MOSFET Transistor 2SJ170DESCRIPTIONLow Drain-Source ON ResistanceHigh Forward Transfer AdmittanceLow Leakage CurrentEnhancement-ModeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operation.APPLICATIONSHigh speed switching applicationSwitching regulator ,DC-DC converter and Motordrive application
2sj171.pdf
INCHANGE Semiconductorisc P-Channel MOSFET Transistor 2SJ171DESCRIPTIONLow Drain-Source ON ResistanceHigh Forward Transfer AdmittanceLow Leakage CurrentEnhancement-ModeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh speed switching applicationSwitching regulator ,DC-DC converter and Motordrive applicationA
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