2SJ177 Datasheet and Replacement
Type Designator: 2SJ177
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 35 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 20 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 125 nS
Cossⓘ - Output Capacitance: 990 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.085 Ohm
Package: TO220FM
2SJ177 substitution
2SJ177 Datasheet (PDF)
2sj177.pdf

2SJ177Silicon P-Channel MOS FETNovember 1996ApplicationHigh speed power switchingFeatures Low on-resistance High speed switching Low drive current 4 V gate drive device Can be driven from 5 V source Suitable for motor drive, DC-DC converter, power switch and solenoid driveOutlineTO-220FMD1231. Gate G2. Drain 3. SourceS2SJ177Abso
2sj177.pdf

2SJ177www.VBsemi.twP-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () Max. ID (A) Qg (Typ.)Definition TrenchFET Power MOSFET0.050 at VGS = - 10 V- 30- 60 67 100 % Rg and UIS Tested0.060 at VGS = - 4.5 V - 24 Compliant to RoHS Directive 2002/95/ECTO-220 FULLPAK SGS DDGP-Channel MO
Datasheet: 2SJ651 , 2SJ652-1E , 2SJ661-1E , 2SJ661-DL-1E , 2SJ661-DL-E , 2SJ673 , 2SJ683 , 2SJ176 , 50N06 , 2SJ182L , 2SJ182S , 2SJ183 , 2SJ210C , 2SJ214L , 2SJ214S , 2SJ215 , 2SJ220L .
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