2SJ214L Todos los transistores

 0.1. Size:84K  hitachi
 2sj214l-s.pdf

 9.1. Size:32K  1
 2sj218.pdf

2SJ218 Silicon P-Channel MOS FET Application High speed power switching Features Low on-resistance High speed switching 4 V gate drive device Can be driven from 5 V source Suitable for motor drive, DC-DC converter, power switch and solenoid drive Outline 2SJ218 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Drain to source voltage VDSS 60 V

 9.2. Size:29K  1
 2sj216.pdf

2SJ216 Silicon P-Channel MOS FET November 1996 Application High speed power switching Features Low on-resistance High speed switching Low drive current 4 V gate drive device _ Can be driven from 5 V source Suitable for motor drive, DC-DC converter, power switch and solenoid drive Outline TO-3PFM D G 1 2 3 1. Gate 2. Drain 3. Source S 2SJ216 Absolut

 9.3. Size:82K  renesas
 2sj217.pdf

2SJ217 Silicon P Channel MOS FET REJ03G0850-0200 (Previous NON-084) Rev.2.00 Sep 07, 2005 Description High speed power switching Features Low on-resistance High speed switching Low drive current 4 V gate drive device Can be driven from 5 V source Suitable for motor drive, DC-DC converter, power switch and solenoid drive Outline RENESAS Pa

 9.4. Size:95K  renesas
 rej03g0850 2sj217ds.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 9.5. Size:152K  renesas
 2sj210c.pdf

Preliminary Data Sheet 2SJ210C R07DS1278EJ0200 Rev.2.00 P-CHANNEL MOSFET FOR SWITCHING Jul 08, 2015 Description The 2SJ210C, P-channel vertical type MOSFET designed for general-purpose switch, is a device which can be driven directly by a 4.5 V power source. Features Directly driven by a 4.5 V power source. Low on-state resistance RDS(on)1 = 2.7 MAX. (VGS = -10

 9.6. Size:303K  nec
 2sj213.pdf

 9.7. Size:365K  nec
 2sj210.pdf

 9.8. Size:393K  nec
 2sj211.pdf

 9.9. Size:308K  nec
 2sj212.pdf

 9.10. Size:58K  hitachi
 2sj215.pdf

2SJ215 Silicon P-Channel MOS FET November 1996 Application High speed power switching Features Low on-resistance High speed switching Low drive current 4 V gate drive device Can be driven from 5 V source Suitable for motor drive, DC-DC converter, power switch and solenoid drive Outline TO-3P D 1 G 2 3 1. Gate 2. Drain (Flange) S 3. Source 2SJ2

 9.11. Size:1034K  kexin
 2sj213.pdf

SMD Type MOSFET P-Channel MOSFET 2SJ213 1.70 0.1 Features VDS (V) =-100V ID =-0.5 A 0.42 0.1 0.46 0.1 RDS(ON) 4.2 (VGS =-10V) RDS(ON) 5 (VGS =-4V) 1.Gate 2.Drain 3.Source Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage VDS -100 V Gate-Source Voltage VGS 20 Continuous Drain Current ID -0.5 A

 9.12. Size:1228K  kexin
 2sj211-3.pdf

SMD Type MOSFET P-Channel MOSFET 2SJ211 SOT-23-3 Unit mm +0.2 2.9 -0.1 +0.1 0.4 -0.1 3 Features VDS (V) =-100V 1 2 +0.02 ID =-0.2 A +0.1 0.15 -0.02 0.95 -0.1 +0.1 1.9 -0.2 RDS(ON) 20 (VGS =-10V) RDS(ON) 30 (VGS =-4V) 1. Gate 2. Source 3. Drain Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage

 9.13. Size:964K  kexin
 2sj210.pdf

SMD Type MOSFET P-Channel MOSFET 2SJ210 SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 3 Features VDS (V) =-60V 1 2 ID =-200m A +0.1 +0.05 0.95-0.1 0.1-0.01 RDS(ON) 10 (VGS =-10V) +0.1 1.9-0.1 RDS(ON) 15 (VGS =-4V) 1. Gate 2. Source 3. Drain Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage VDS -6

 9.14. Size:1256K  kexin
 2sj210-3.pdf

SMD Type MOSFET P-Channel MOSFET 2SJ210 SOT-23-3 Unit mm +0.2 2.9 -0.1 +0.1 0.4 -0.1 Features 3 VDS (V) =-60V ID =-200m A RDS(ON) 10 (VGS =-10V) 1 2 +0.02 +0.1 0.15 -0.02 0.95-0.1 RDS(ON) 15 (VGS =-4V) +0.1 1.9-0.2 1. Gate 2. Source 3. Drain Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage VD

 9.15. Size:1220K  kexin
 2sj211.pdf

SMD Type MOSFET P-Channel MOSFET 2SJ211 SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4-0.1 3 Features VDS (V) =-100V 1 2 ID =-0.2 A +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 RDS(ON) 20 (VGS =-10V) RDS(ON) 30 (VGS =-4V) 1. Gate 2. Source 3. Drain Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage VDS

 9.16. Size:1308K  kexin
 2sj212.pdf

SMD Type MOSFET P-Channel MOSFET 2SJ212 1.70 0.1 Features VDS (V) =-60V ID =-500m A 0.42 0.1 0.46 0.1 RDS(ON) 3 (VGS =-10V) RDS(ON) 4 (VGS =-4V) 1.Gate 2.Drain 3.Source Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage VDS -60 V Gate-Source Voltage VGS 20 Continuous Drain Current ID -0.5 A Pul