All MOSFET. 2SJ214L Datasheet

 

2SJ214L MOSFET. Datasheet pdf. Equivalent

Type Designator: 2SJ214L

Type of Transistor: MOSFET

Type of Control Channel: P -Channel

Maximum Power Dissipation (Pd): 40 W

Maximum Drain-Source Voltage |Vds|: 60 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Drain Current |Id|: 10 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 65 nS

Drain-Source Capacitance (Cd): 460 pF

Maximum Drain-Source On-State Resistance (Rds): 0.18 Ohm

Package: TO263

2SJ214L Transistor Equivalent Substitute - MOSFET Cross-Reference Search

2SJ214L Datasheet (PDF)

1.1. 2sj214l-s.pdf Size:84K _upd

2SJ214L
2SJ214L



5.1. 2sj215.pdf Size:58K _upd

2SJ214L
2SJ214L

2SJ215 Silicon P-Channel MOS FET November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device  Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive Outline TO-3P D 1 G 2 3 1. Gate 2. Drain (Flange) S 3. Source 2SJ2

5.2. 2sj210c.pdf Size:152K _upd

2SJ214L
2SJ214L

 Preliminary Data Sheet 2SJ210C R07DS1278EJ0200 Rev.2.00 P-CHANNEL MOSFET FOR SWITCHING Jul 08, 2015 Description The 2SJ210C, P-channel vertical type MOSFET designed for general-purpose switch, is a device which can be driven directly by a 4.5 V power source. Features  Directly driven by a 4.5 V power source.  Low on-state resistance RDS(on)1 = 2.7  MAX. (VGS = -10

 5.3. 2sj217.pdf Size:82K _renesas

2SJ214L
2SJ214L

2SJ217 Silicon P Channel MOS FET REJ03G0850-0200 (Previous: NON-084) Rev.2.00 Sep 07, 2005 Description High speed power switching Features Low on-resistance High speed switching Low drive current 4 V gate drive device ? Can be driven from 5 V source Suitable for motor drive, DC-DC converter, power switch and solenoid drive Outline RENESAS Package code: PRS

5.4. rej03g0850 2sj217ds.pdf Size:95K _renesas

2SJ214L
2SJ214L

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

 5.5. 2sj211.pdf Size:393K _nec

2SJ214L
2SJ214L

5.6. 2sj212.pdf Size:308K _nec

2SJ214L
2SJ214L

5.7. 2sj213.pdf Size:303K _nec

2SJ214L
2SJ214L

5.8. 2sj210.pdf Size:365K _nec

2SJ214L
2SJ214L

5.9. 2sj211-3.pdf Size:1228K _kexin

2SJ214L
2SJ214L

SMD Type MOSFET P-Channel MOSFET 2SJ211 SOT-23-3 Unit: mm +0.2 2.9 -0.1 +0.1 0.4 -0.1 3 ■ Features ● VDS (V) =-100V 1 2 +0.02 ● ID =-0.2 A +0.1 0.15 -0.02 0.95 -0.1 +0.1 1.9 -0.2 ● RDS(ON) < 20Ω (VGS =-10V) ● RDS(ON) < 30Ω (VGS =-4V) 1. Gate 2. Source 3. Drain ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Drain-Source Voltage

5.10. 2sj211.pdf Size:1220K _kexin

2SJ214L
2SJ214L

SMD Type MOSFET P-Channel MOSFET 2SJ211 SOT-23 Unit: mm +0.1 2.9 -0.1 +0.1 0.4-0.1 3 ■ Features ● VDS (V) =-100V 1 2 ● ID =-0.2 A +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 ● RDS(ON) < 20Ω (VGS =-10V) ● RDS(ON) < 30Ω (VGS =-4V) 1. Gate 2. Source 3. Drain ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Drain-Source Voltage VDS

5.11. 2sj212.pdf Size:1308K _kexin

2SJ214L
2SJ214L

SMD Type MOSFET P-Channel MOSFET 2SJ212 1.70 0.1 ■ Features ● VDS (V) =-60V ● ID =-500m A 0.42 0.1 0.46 0.1 ● RDS(ON) < 3Ω (VGS =-10V) ● RDS(ON) < 4Ω (VGS =-4V) 1.Gate 2.Drain 3.Source ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Drain-Source Voltage VDS -60 V Gate-Source Voltage VGS ±20 Continuous Drain Current ID -0.5 A Pul

5.12. 2sj213.pdf Size:1034K _kexin

2SJ214L
2SJ214L

SMD Type MOSFET P-Channel MOSFET 2SJ213 1.70 0.1 ■ Features ● VDS (V) =-100V ● ID =-0.5 A 0.42 0.1 0.46 0.1 ● RDS(ON) < 4.2Ω (VGS =-10V) ● RDS(ON) < 5Ω (VGS =-4V) 1.Gate 2.Drain 3.Source ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Drain-Source Voltage VDS -100 V Gate-Source Voltage VGS ±20 Continuous Drain Current ID -0.5 A

5.13. 2sj210-3.pdf Size:1256K _kexin

2SJ214L
2SJ214L

SMD Type MOSFET P-Channel MOSFET 2SJ210 SOT-23-3 Unit: mm +0.2 2.9 -0.1 +0.1 0.4 -0.1 ■ Features 3 ● VDS (V) =-60V ● ID =-200m A ● RDS(ON) < 10Ω (VGS =-10V) 1 2 +0.02 +0.1 0.15 -0.02 0.95-0.1 ● RDS(ON) < 15Ω (VGS =-4V) +0.1 1.9-0.2 1. Gate 2. Source 3. Drain ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Drain-Source Voltage VD

5.14. 2sj210.pdf Size:964K _kexin

2SJ214L
2SJ214L

SMD Type MOSFET P-Channel MOSFET 2SJ210 SOT-23 Unit: mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 3 ■ Features ● VDS (V) =-60V 1 2 ● ID =-200m A +0.1 +0.05 0.95-0.1 0.1-0.01 ● RDS(ON) < 10Ω (VGS =-10V) +0.1 1.9-0.1 ● RDS(ON) < 15Ω (VGS =-4V) 1. Gate 2. Source 3. Drain ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Drain-Source Voltage VDS -6

Datasheet: 2SJ673 , 2SJ683 , 2SJ176 , 2SJ177 , 2SJ182L , 2SJ182S , 2SJ183 , 2SJ210C , IRFZ46N , 2SJ214S , 2SJ215 , 2SJ220L , 2SJ220S , 2SJ606 , 2SJ606-S , 2SJ606-Z , 2SJ607 .

 
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