2SJ606-S MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SJ606-S
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 120 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 83 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Qgⓘ - Carga de la puerta: 120 nC
trⓘ - Tiempo de subida: 13 nS
Cossⓘ - Capacitancia de salida: 1200 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.015 Ohm
Paquete / Cubierta: TO262
2SJ606-S Datasheet (PDF)
2sj606-s-z-zj.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
2sj606-zj.pdf

SMD Type MOSFETP-Channel MOSFET2SJ606-ZJ Features VDS (V) =-60V ID =-83A RDS(ON) 15m (VGS =-10V) RDS(ON) 23m (VGS =-4V) Low Ciss: Ciss = 4800 pF (TYP.)DrainBodyGate DiodeGateProtectionSourceDiode Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS -60V Gate-Source Voltage VGS 20
2sj606.pdf

DATA SHEETMOS FIELD EFFECT TRANSISTOR2SJ606SWITCHINGP-CHANNEL POWER MOS FETDESCRIPTION ORDERING INFORMATION The 2SJ606 is P-channel MOS Field Effect Transistor designedPART NUMBER PACKAGEfor high current switching applications.2SJ606 TO-220AB2SJ606-S TO-262FEATURES2SJ606-ZJ TO-263 Super low on-state resistance:NoteRDS(on)1 = 15 m MAX. (VGS = -10 V, ID = -42 A
Otros transistores... 2SJ183 , 2SJ210C , 2SJ214L , 2SJ214S , 2SJ215 , 2SJ220L , 2SJ220S , 2SJ606 , IRF630 , 2SJ606-Z , 2SJ607 , 2SJ607-Z , 2SJ621 , 2SJ624 , 2SJ625 , 2SJ626 , 2SJ647 .
History: AOWF7S65 | HGB110N20S
History: AOWF7S65 | HGB110N20S



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