2SJ606-S - аналоги, параметры транзистора - Справочник транзисторов

2SJ606-S даташит

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To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

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SMD Type MOSFET P-Channel MOSFET 2SJ606-ZJ Features VDS (V) =-60V ID =-83A RDS(ON) 15m (VGS =-10V) RDS(ON) 23m (VGS =-4V) Low Ciss Ciss = 4800 pF (TYP.) Drain Body Gate Diode Gate Protection Source Diode Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage VDS -60 V Gate-Source Voltage VGS 20

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DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ606 SWITCHING P-CHANNEL POWER MOS FET DESCRIPTION ORDERING INFORMATION The 2SJ606 is P-channel MOS Field Effect Transistor designed PART NUMBER PACKAGE for high current switching applications. 2SJ606 TO-220AB 2SJ606-S TO-262 FEATURES 2SJ606-ZJ TO-263 Super low on-state resistance Note RDS(on)1 = 15 m MAX. (VGS = -10 V, ID = -42 A

Другие MOSFET... 2SJ183 , 2SJ210C , 2SJ214L , 2SJ214S , 2SJ215 , 2SJ220L , 2SJ220S , 2SJ606 , IRF3710 , 2SJ606-Z , 2SJ607 , 2SJ607-Z , 2SJ621 , 2SJ624 , 2SJ625 , 2SJ626 , 2SJ647 .