2SJ621 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

2SJ621 Datasheet (PDF)

..1. Size:292K nec
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201041NEC

9.1. Size:345K toshiba
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2SJ620 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2--MOSV) 2SJ620 Switching Regulator and DC-DC Converter Applications Unit: mm Motor Drive Applications 4-V gate drive Low drain-source ON resistance: R = 63 m (typ.) DS (ON) High forward transfer admittance: |Y | = 15 S (typ.) fs Low leakage current: I = -100 A (max) (V = -100 V) DS

9.2. Size:30K sanyo
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Ordering number : ENN72712SJ628P-Channel Silicon MOSFET2SJ628Ultrahigh-Speed Switching ApplicationsPreliminaryFeatures Package Dimensions Low ON-resistance. unit : mm Ultrahigh-speed switching. 2062A 1.8V drive.[2SJ628]4.51.51.60.4 0.53 2 10.41.53.0(Bottom view)1 : Gate0.75 2 : Drain3 : SourceSpecificationsSANYO : PCPAbsolute Maximum Ra

9.3. Size:193K nec
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To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.