2SJ621 MOSFET. Datasheet pdf. Equivalent

   Type Designator: 2SJ621
   Marking Code: XG
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 1.25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 12 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Vgs(off)|ⓘ - Minimum Gate-to-Source Cutoff Voltage: 0.45 V
   |Id|ⓘ - Maximum Drain Current: 3.5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 6.2 nC
   trⓘ - Rise Time: 70 nS
   Cossⓘ - Output Capacitance: 170 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.044 Ohm
   Package: SC96

2SJ621 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

2SJ621 Datasheet (PDF)

..1. Size:292K nec
2sj621.pdf

201041NEC

9.1. Size:345K toshiba
2sj620.pdf

2SJ620 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2--MOSV) 2SJ620 Switching Regulator and DC-DC Converter Applications Unit: mm Motor Drive Applications 4-V gate drive Low drain-source ON resistance: R = 63 m (typ.) DS (ON) High forward transfer admittance: |Y | = 15 S (typ.) fs Low leakage current: I = -100 A (max) (V = -100 V) DS

9.2. Size:30K sanyo
2sj628.pdf

Ordering number : ENN72712SJ628P-Channel Silicon MOSFET2SJ628Ultrahigh-Speed Switching ApplicationsPreliminaryFeatures Package Dimensions Low ON-resistance. unit : mm Ultrahigh-speed switching. 2062A 1.8V drive.[2SJ628]4.51.51.60.4 0.53 2 10.41.53.0(Bottom view)1 : Gate0.75 2 : Drain3 : SourceSpecificationsSANYO : PCPAbsolute Maximum Ra

9.3. Size:193K nec
2sj625.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

9.4. Size:329K nec
2sj626.pdf