2SJ624 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SJ624
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 1.25 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 20 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 8 V
|Id|ⓘ - Corriente continua de drenaje: 4.5 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 42 nS
Cossⓘ - Capacitancia de salida: 165 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.054 Ohm
Encapsulados: SC96
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2SJ624 datasheet
2sj620.pdf
2SJ620 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2- -MOSV) 2SJ620 Switching Regulator and DC-DC Converter Applications Unit mm Motor Drive Applications 4-V gate drive Low drain-source ON resistance R = 63 m (typ.) DS (ON) High forward transfer admittance Y = 15 S (typ.) fs Low leakage current I = -100 A (max) (V = -100 V) DS
2sj628.pdf
Ordering number ENN7271 2SJ628 P-Channel Silicon MOSFET 2SJ628 Ultrahigh-Speed Switching Applications Preliminary Features Package Dimensions Low ON-resistance. unit mm Ultrahigh-speed switching. 2062A 1.8V drive. [2SJ628] 4.5 1.5 1.6 0.4 0.5 3 2 1 0.4 1.5 3.0 (Bottom view) 1 Gate 0.75 2 Drain 3 Source Specifications SANYO PCP Absolute Maximum Ra
2sj625.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
Otros transistores... 2SJ220L , 2SJ220S , 2SJ606 , 2SJ606-S , 2SJ606-Z , 2SJ607 , 2SJ607-Z , 2SJ621 , P55NF06 , 2SJ625 , 2SJ626 , 2SJ647 , 2SJ649 , 2SJ600 , 2SJ601-Z , 2SJ602 , 2SJ602-S .
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