2SJ647 Todos los transistores

 

2SJ647 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SJ647

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 0.2 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 20 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 12 V

|Id|ⓘ - Corriente continua de drenaje: 0.4 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 39 nS

Cossⓘ - Capacitancia de salida: 15 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 1.17 Ohm

Encapsulados: SOT323

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2SJ647 datasheet

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2SJ647

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

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2SJ647

Ordering number ENN8282 2SJ646 P-Channel Silicon MOSFET General-Purpose Switching Device 2SJ646 Applications Features Low ON-resistance. Ultrahigh-speed switching. 4V drive. Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS --30 V Gate-to-Source Voltage VGSS 20 V Drain Current (DC) ID --8 A Dr

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 2sj649.pdf pdf_icon

2SJ647

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

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2SJ647

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ648 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION PACKAGE DRAWING (Unit mm) The 2SJ648 is a switching device which can be driven directly +0.1 0.3 0 by a 2.5 V power source. 0.1+0.1 0.05 The 2SJ648 features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as

MOSTRAR MÁS

Otros transistores... 2SJ606-S , 2SJ606-Z , 2SJ607 , 2SJ607-Z , 2SJ621 , 2SJ624 , 2SJ625 , 2SJ626 , IRFP250N , 2SJ649 , 2SJ600 , 2SJ601-Z , 2SJ602 , 2SJ602-S , 2SJ602-Z , 2SJ603 , 2SJ603-S .

History: KMB3D9N40TA

 

 

 

 

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