2SJ647 Specs and Replacement
Type Designator: 2SJ647
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 0.2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 0.4 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 39 nS
Cossⓘ - Output Capacitance: 15 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.17 Ohm
Package: SOT323
2SJ647 substitution
- MOSFET ⓘ Cross-Reference Search
2SJ647 datasheet
2sj647.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒
2sj646.pdf
Ordering number ENN8282 2SJ646 P-Channel Silicon MOSFET General-Purpose Switching Device 2SJ646 Applications Features Low ON-resistance. Ultrahigh-speed switching. 4V drive. Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS --30 V Gate-to-Source Voltage VGSS 20 V Drain Current (DC) ID --8 A Dr... See More ⇒
2sj649.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒
2sj648.pdf
DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ648 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION PACKAGE DRAWING (Unit mm) The 2SJ648 is a switching device which can be driven directly +0.1 0.3 0 by a 2.5 V power source. 0.1+0.1 0.05 The 2SJ648 features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as... See More ⇒
Detailed specifications: 2SJ606-S, 2SJ606-Z, 2SJ607, 2SJ607-Z, 2SJ621, 2SJ624, 2SJ625, 2SJ626, IRFP250N, 2SJ649, 2SJ600, 2SJ601-Z, 2SJ602, 2SJ602-S, 2SJ602-Z, 2SJ603, 2SJ603-S
Keywords - 2SJ647 MOSFET specs
2SJ647 cross reference
2SJ647 equivalent finder
2SJ647 pdf lookup
2SJ647 substitution
2SJ647 replacement
Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility
History: ME4925-G
🌐 : EN ES РУ
LIST
Last Update
MOSFET: AUB062N08BG | AUB060N08AG | AUB056N10 | AUB056N08BGL | AUB050N085 | AUB050N055 | AUB045N12 | AUB045N10BT | AUB039N10 | AUB034N10
Popular searches
b772m transistor | mj15003g datasheet | irfp460n datasheet | mj15025g | ksa1381 replacement | m3056m mosfet | skd502t mosfet | tip 35 transistor
