2SJ603-S Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SJ603-S  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 50 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 25 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 11 nS

Cossⓘ - Capacitancia de salida: 350 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.048 Ohm

Encapsulados: TO262

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2SJ603-S datasheet

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2SJ603-S

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

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2SJ603-S

SMD Type MOSFET P-Channel MOSFET 2SJ603-ZJ Features VDS (V) =-60V ID =-25A RDS(ON) 48m (VGS =-10V) RDS(ON) 75m (VGS =-4V) Low Ciss Ciss = 1900 pF (TYP.) Drain Body Gate Diode Gate Protection Source Diode Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage VDS -60 V Gate-Source Voltage VGS 20

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2SJ603-S

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ603 SWITCHING P-CHANNEL POWER MOS FET ORDERING INFORMATION DESCRIPTION The 2SJ603 is P-channel MOS Field Effect Transistor designed PART NUMBER PACKAGE for solenoid, motor and lamp driver. 2SJ603 TO-220AB 2SJ603-S TO-262 FEATURES 2SJ603-ZJ TO-263 Super low on-state resistance Note RDS(on)1 = 48 m MAX. (VGS = -10 V, ID = -13 A) 2

MOSTRAR MÁS

Otros transistores... 2SJ647, 2SJ649, 2SJ600, 2SJ601-Z, 2SJ602, 2SJ602-S, 2SJ602-Z, 2SJ603, IRFP064N, 2SJ603-Z, 2SJ604, 2SJ604-S, 2SJ604-Z, 2SJ605, 2SJ605-S, 2SJ605-Z, 2SJ245L