2SJ603-S MOSFET. Datasheet pdf. Equivalent
Type Designator: 2SJ603-S
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Maximum Power Dissipation (Pd): 50 W
Maximum Drain-Source Voltage |Vds|: 60 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Drain Current |Id|: 25 A
Maximum Junction Temperature (Tj): 150 °C
Rise Time (tr): 11 nS
Drain-Source Capacitance (Cd): 350 pF
Maximum Drain-Source On-State Resistance (Rds): 0.048 Ohm
Package: TO262
2SJ603-S Transistor Equivalent Substitute - MOSFET Cross-Reference Search
2SJ603-S Datasheet (PDF)
2sj603-s-z-zj.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
2sj603-zj.pdf
SMD Type MOSFETP-Channel MOSFET2SJ603-ZJ Features VDS (V) =-60V ID =-25A RDS(ON) 48m (VGS =-10V) RDS(ON) 75m (VGS =-4V) Low Ciss: Ciss = 1900 pF (TYP.)DrainBodyGate DiodeGateProtectionSourceDiode Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS -60V Gate-Source Voltage VGS 20
2sj603.pdf
DATA SHEETMOS FIELD EFFECT TRANSISTOR2SJ603SWITCHINGP-CHANNEL POWER MOS FETORDERING INFORMATIONDESCRIPTION The 2SJ603 is P-channel MOS Field Effect Transistor designedPART NUMBER PACKAGEfor solenoid, motor and lamp driver.2SJ603 TO-220AB2SJ603-S TO-262FEATURES2SJ603-ZJ TO-263 Super low on-state resistance:NoteRDS(on)1 = 48 m MAX. (VGS = -10 V, ID = -13 A) 2
Datasheet: 2SJ647 , 2SJ649 , 2SJ600 , 2SJ601-Z , 2SJ602 , 2SJ602-S , 2SJ602-Z , 2SJ603 , 2SK3568 , 2SJ603-Z , 2SJ604 , 2SJ604-S , 2SJ604-Z , 2SJ605 , 2SJ605-S , 2SJ605-Z , 2SJ245L .
