2SJ604-S Todos los transistores

 

2SJ604-S MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SJ604-S

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 70 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 45 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 11 nS

Cossⓘ - Capacitancia de salida: 580 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.03 Ohm

Encapsulados: TO262

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2SJ604-S datasheet

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2SJ604-S

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

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2SJ604-S

SMD Type MOSFET P-Channel MOSFET 2SJ604-ZJ Features VDS (V) =-60V ID =-45A RDS(ON) 30m (VGS =-10V ) RDS(ON) 43m (VGS =-4V) Low Ciss Ciss = 3300 pF (TYP.) Drain Body Gate Diode Gate Protection Source Diode Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage VDS -60 V Gate-Source Voltage VGS 20

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2SJ604-S

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ604 SWITCHING P-CHANNEL POWER MOS FET DESCRIPTION ORDERING INFORMATION The 2SJ604 is P-channel MOS Field Effect Transistor designed PART NUMBER PACKAGE for solenoid, motor and lamp driver. 2SJ604 TO-220AB 2SJ604-S TO-262 FEATURES 2SJ604-ZJ TO-263 Super low on-state resistance Note RDS(on)1 = 30 m MAX. (VGS = -10 V, ID = -23 A) 2S

Otros transistores... 2SJ601-Z , 2SJ602 , 2SJ602-S , 2SJ602-Z , 2SJ603 , 2SJ603-S , 2SJ603-Z , 2SJ604 , K3569 , 2SJ604-Z , 2SJ605 , 2SJ605-S , 2SJ605-Z , 2SJ245L , 2SJ245S , 2SJ246L , 2SJ246S .

 

 

 


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