2SJ604-S
MOSFET. Datasheet pdf. Equivalent
Type Designator: 2SJ604-S
Type of Transistor: MOSFET
Type of Control Channel: P
-Channel
Pdⓘ
- Maximum Power Dissipation: 70
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Id|ⓘ - Maximum Drain Current: 45
A
Tjⓘ - Maximum Junction Temperature: 150
°C
trⓘ - Rise Time: 11
nS
Cossⓘ -
Output Capacitance: 580
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.03
Ohm
Package:
TO262
2SJ604-S
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
2SJ604-S
Datasheet (PDF)
0.1. Size:207K nec
2sj604-s-z-zj.pdf 
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
7.1. Size:1564K kexin
2sj604-zj.pdf
SMD Type MOSFETP-Channel MOSFET2SJ604-ZJ Features VDS (V) =-60V ID =-45A RDS(ON) 30m (VGS =-10V ) RDS(ON) 43m (VGS =-4V) Low Ciss: Ciss = 3300 pF (TYP.)DrainBodyGate DiodeGateProtectionSourceDiode Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS -60V Gate-Source Voltage VGS 20
8.1. Size:79K nec
2sj604.pdf
DATA SHEETMOS FIELD EFFECT TRANSISTOR2SJ604SWITCHINGP-CHANNEL POWER MOS FETDESCRIPTION ORDERING INFORMATION The 2SJ604 is P-channel MOS Field Effect Transistor designedPART NUMBER PACKAGEfor solenoid, motor and lamp driver.2SJ604 TO-220AB2SJ604-S TO-262FEATURES2SJ604-ZJ TO-263 Super low on-state resistance:NoteRDS(on)1 = 30 m MAX. (VGS = -10 V, ID = -23 A) 2S
Datasheet: FQT7N10L
, FDP083N15A
, FQU10N20C
, FDP075N15A
, FQU11P06
, FQU12N20
, FDPF085N10A
, FQU13N06L
, IRFZ44
, FDB86102LZ
, FQU17P06
, FQU1N60C
, FDP085N10A
, FQU20N06L
, FQU2N100
, FQU2N60C
, FDMC8030
.
