2SJ605-S Todos los transistores

 

2SJ605-S MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SJ605-S

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 100 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 65 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 14 nS

Cossⓘ - Capacitancia de salida: 820 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.02 Ohm

Encapsulados: TO262

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2SJ605-S datasheet

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2SJ605-S

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

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2SJ605-S

SMD Type MOSFET P-Channel MOSFET 2SJ605-ZJ Features VDS (V) =-60V ID =-65A RDS(ON) 20m (VGS =-10V) RDS(ON) 31m (VGS =-4V) Low Ciss Ciss = 4600 pF (TYP.) Drain Body Gate Diode Gate Protection Source Diode Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage VDS -60 V Gate-Source Voltage VGS 20

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2SJ605-S

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ605 SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION ORDERING INFORMATION The 2SJ605 is P-channel MOS Field Effect Transistor designed PART NUMBER PACKAGE for high current switching applications. 2SJ605 TO-220AB 2SJ605-S TO-262 FEATURES 2SJ605-ZJ TO-263 Super low on-state resistance 2SJ605-Z TO-220SMDNote RDS(on)1 = 20

MOSTRAR MÁS

Otros transistores... 2SJ602-Z , 2SJ603 , 2SJ603-S , 2SJ603-Z , 2SJ604 , 2SJ604-S , 2SJ604-Z , 2SJ605 , SPP20N60C3 , 2SJ605-Z , 2SJ245L , 2SJ245S , 2SJ246L , 2SJ246S , 2SJ279L , 2SJ279S , 2SJ280L .

 

 

 

 

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