2SJ605-S Datasheet and Replacement. Cross Reference Search

2SJ605-S Datasheet (PDF)

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To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

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SMD Type MOSFETP-Channel MOSFET2SJ605-ZJ Features VDS (V) =-60V ID =-65A RDS(ON) 20m (VGS =-10V) RDS(ON) 31m (VGS =-4V) Low Ciss: Ciss = 4600 pF (TYP.)DrainBodyGate DiodeGateProtectionSourceDiode Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS -60V Gate-Source Voltage VGS 20

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DATA SHEETMOS FIELD EFFECT TRANSISTOR2SJ605SWITCHINGP-CHANNEL POWER MOS FETINDUSTRIAL USEDESCRIPTION ORDERING INFORMATION The 2SJ605 is P-channel MOS Field Effect Transistor designedPART NUMBER PACKAGEfor high current switching applications.2SJ605 TO-220AB2SJ605-S TO-262FEATURES2SJ605-ZJ TO-263 Super low on-state resistance:2SJ605-Z TO-220SMDNoteRDS(on)1 = 20

Datasheet: 2SJ602-Z , 2SJ603 , 2SJ603-S , 2SJ603-Z , 2SJ604 , 2SJ604-S , 2SJ604-Z , 2SJ605 , IRFP450 , 2SJ605-Z , 2SJ245L , 2SJ245S , 2SJ246L , 2SJ246S , 2SJ279L , 2SJ279S , 2SJ280L .