2SJ605-S Datasheet. Specs and Replacement

Type Designator: 2SJ605-S  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 100 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 65 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 14 nS

Cossⓘ - Output Capacitance: 820 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm

Package: TO262

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2SJ605-S datasheet

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2SJ605-S

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒

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2SJ605-S

SMD Type MOSFET P-Channel MOSFET 2SJ605-ZJ Features VDS (V) =-60V ID =-65A RDS(ON) 20m (VGS =-10V) RDS(ON) 31m (VGS =-4V) Low Ciss Ciss = 4600 pF (TYP.) Drain Body Gate Diode Gate Protection Source Diode Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage VDS -60 V Gate-Source Voltage VGS 20 ... See More ⇒

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2SJ605-S

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ605 SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION ORDERING INFORMATION The 2SJ605 is P-channel MOS Field Effect Transistor designed PART NUMBER PACKAGE for high current switching applications. 2SJ605 TO-220AB 2SJ605-S TO-262 FEATURES 2SJ605-ZJ TO-263 Super low on-state resistance 2SJ605-Z TO-220SMDNote RDS(on)1 = 20 ... See More ⇒

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Detailed specifications: 2SJ602-Z, 2SJ603, 2SJ603-S, 2SJ603-Z, 2SJ604, 2SJ604-S, 2SJ604-Z, 2SJ605, IRFP260, 2SJ605-Z, 2SJ245L, 2SJ245S, 2SJ246L, 2SJ246S, 2SJ279L, 2SJ279S, 2SJ280L

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