2SJ494 Todos los transistores

 ..1. Size:71K  nec
 2sj494.pdf

DATA SHEET MOS FIELD EFFECT POWER TRANSISTORS 2SJ494 SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE PACKAGE DIMENSIONS DESCRIPTION (in millimeter) This product is P-Channel MOS Field Effect Transistor designed for high current switching applications. 4.5 0.2 10.0 0.3 3.2 0.2 2.7 0.2 FEATURES Super Low On-State Resistance RDS(on)1 = 50 m Max. (VGS = 10 V, ID = 1

 9.1. Size:31K  sanyo
 2sj499.pdf

Ordering number ENN6589 2SJ499 P-Channel Silicon MOSFET 2SJ499 Load Switching Applications Features Package Dimensions Low ON-state resistance. unit mm 4V drive. 2083B [2SJ499] 6.5 2.3 5.0 0.5 4 0.85 0.7 1.2 0.6 0.5 1 Gate 1 2 3 2 Drain 3 Source 4 Drain 2.3 2.3 SANYO TP unit mm 2092B [2SJ499] 6.5 2.3 5.0 0.5 4 0.5 0.85 1 2 3 0.6 1 Gat

 9.2. Size:87K  renesas
 2sj496.pdf

2SJ496 Silicon P Channel MOS FET REJ03G0870-0300 (Previous ADE-208-482A) Rev.3.00 Sep 07, 2005 Description High speed power switching Features Low on-resistance RDS (on) = 0.12 typ. (at VGS = 10 V, ID = 2.5 A) 4 V gate drive devices. Large current capacitance ID = 5 A Outline RENESAS Package code PRSS0003DC-A (Package name TO-92 Mod) D

 9.3. Size:178K  renesas
 2sj495.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 9.4. Size:107K  renesas
 r07ds0433ej 2sj496.pdf

Preliminary Datasheet R07DS0433EJ0400 2SJ496 (Previous REJ03G0870-0300) Rev.4.00 Silicon P Channel MOS FET Jun 07, 2011 Description High speed power switching Features Low on-resistance RDS (on) = 0.12 typ. (at VGS = 10 V, ID = 2.5 A) 4 V gate drive devices. Large current capacitance ID = 5 A Outline RENESAS Package code PRSS0003DC-A (Pack

 9.5. Size:65K  nec
 2sj493.pdf

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ493 SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION ORDERING INFORMATION This product is P-Channel MOS Field Effect Transistor PART NUMBER PACKAGE designed for high current switching applications. 2SJ493 Isolated TO-220 FEATURES Super low on-state resistance RDS(on)1 = 100 m (MAX.) (VGS = 10 V, ID = 8 A) RDS(on)2

 9.6. Size:74K  nec
 2sj495.pdf

DATA SHEET MOS FIELD EFFECT POWER TRANSISTORS 2SJ495 SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS This product is P-Channel MOS Field Effect Transistor (in millimeter) designed for high current switching applications. 10.0 0.3 4.5 0.2 3.2 0.2 2.7 0.2 FEATURES Super Low On-State Resistance RDS(on)1 = 30 m MAX. (VGS = 10 V, ID =

 9.7. Size:71K  nec
 2sj492 2sj492-s 2sj492-zj.pdf

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ492 SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION ORDERING INFORMATION This product is P-Channel MOS Field Effect Transistor PART NUMBER PACKAGE designed for DC/DC converters and motor/lamp driver 2SJ492 TO-220AB circuits. 2SJ492-S TO-262 2SJ492-ZJ TO-263 FEATURES Low on-state resistance RDS(on)1 = 100 m (MAX.) (VG

 9.8. Size:192K  hitachi
 2sj48 2sj49 2sj50.pdf

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer

 9.9. Size:106K  isahaya
 2sj498.pdf

ISAHAYA ELECTRONICS CORPORATION ISAHAYA ELECTRONICS CORPORATION ISAHAYA ELECTRONICS CORPORATION http //www.idc-com.co.jp 6-41, TSUKUBA, ISAHAYA, NAGASAKI, 854-0065, JAPAN Keep safety in your circuit designs ! Isahaya Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble

 9.10. Size:1625K  kexin
 2sj492-zj.pdf

SMD Type MOSFET P-Channel MOSFET 2SJ492-ZJ Features VDS (V) =-60V ID =-20 A RDS(ON) 100m (VGS =-10V) RDS(ON) 185m (VGS =-4V) Low Ciss Ciss = 1210 pF (TYP.) Drain Body Gate Diode Gate Protection Source Diode Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage VDS -60 V VGS(AC) 20 Gate-Sourc

 9.11. Size:50K  kexin
 2sj492.pdf

SMD Type MOSFET MOS Field Effect Transistor 2SJ492 TO-263 Unit mm Features +0.2 4.57-0.2 +0.1 1.27-0.1 Low on-state resistance RDS(on)1 = 100 m (MAX.) (VGS =-10V, ID =-10A) RDS(on)2 = 185 m (MAX.) (VGS =-4 V, ID =-10 A) +0.1 Low Ciss Ciss = 1210 pF (TYP.) 0.1max 1.27-0.1 Built-in gate protection diode +0.1 0.81-0.1 2.54 1Gate +0.2 2.54-0.2 +0.1 +0.2 5.08-0.1 0.4-0.2 2D