DATA SHEETMOS FIELD EFFECT POWER TRANSISTORS2SJ494SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USEPACKAGE DIMENSIONSDESCRIPTION(in millimeter)This product is P-Channel MOS Field Effect Transistordesigned for high current switching applications.4.50.210.00.33.20.22.70.2FEATURES Super Low On-State ResistanceRDS(on)1 = 50 m Max. (VGS = 10 V, ID = 1

Ordering number : ENN65892SJ499P-Channel Silicon MOSFET2SJ499Load Switching ApplicationsFeatures Package Dimensions Low ON-state resistance. unit : mm 4V drive. 2083B[2SJ499]6.52.35.00.540.850.71.20.60.51 : Gate1 2 32 : Drain3 : Source4 : Drain2.3 2.3SANYO : TPunit : mm2092B[2SJ499]6.5 2.35.0 0.540.50.851 2 30.6 1 : Gat

2SJ496 Silicon P Channel MOS FET REJ03G0870-0300 (Previous: ADE-208-482A) Rev.3.00 Sep 07, 2005 Description High speed power switching Features Low on-resistance RDS (on) = 0.12 typ. (at VGS = 10 V, ID = 2.5 A) 4 V gate drive devices. Large current capacitance ID = 5 A Outline RENESAS Package code: PRSS0003DC-A(Package name: TO-92 Mod)D

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

Preliminary Datasheet R07DS0433EJ04002SJ496 (Previous: REJ03G0870-0300)Rev.4.00Silicon P Channel MOS FET Jun 07, 2011Description High speed power switching Features Low on-resistance RDS (on) = 0.12 typ. (at VGS = 10 V, ID = 2.5 A) 4 V gate drive devices. Large current capacitance ID = 5 A Outline RENESAS Package code: PRSS0003DC-A(Pack

DATA SHEETMOS FIELD EFFECT TRANSISTOR2SJ493SWITCHINGP-CHANNEL POWER MOS FETINDUSTRIAL USEDESCRIPTION ORDERING INFORMATION This product is P-Channel MOS Field Effect TransistorPART NUMBER PACKAGEdesigned for high current switching applications.2SJ493 Isolated TO-220FEATURES Super low on-state resistanceRDS(on)1 = 100 m (MAX.) (VGS = 10 V, ID = 8 A)RDS(on)2

DATA SHEETMOS FIELD EFFECT POWER TRANSISTORS2SJ495SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USEDESCRIPTION PACKAGE DIMENSIONSThis product is P-Channel MOS Field Effect Transistor (in millimeter)designed for high current switching applications.10.0 0.3 4.5 0.23.2 0.22.7 0.2FEATURES Super Low On-State ResistanceRDS(on)1 = 30 m MAX. (VGS = 10 V, ID =

DATA SHEETMOS FIELD EFFECT TRANSISTOR2SJ492SWITCHINGP-CHANNEL POWER MOS FETINDUSTRIAL USEDESCRIPTION ORDERING INFORMATION This product is P-Channel MOS Field Effect TransistorPART NUMBER PACKAGEdesigned for DC/DC converters and motor/lamp driver2SJ492 TO-220ABcircuits.2SJ492-S TO-2622SJ492-ZJ TO-263FEATURES Low on-state resistanceRDS(on)1 = 100 m (MAX.) (VG

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer

ISAHAYA ELECTRONICS CORPORATIONISAHAYA ELECTRONICS CORPORATIONISAHAYA ELECTRONICS CORPORATIONhttp://www.idc-com.co.jp6-41, TSUKUBA, ISAHAYA, NAGASAKI, 854-0065, JAPANKeep safety in your circuit designs !Isahaya Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble

SMD Type MOSFETP-Channel MOSFET2SJ492-ZJ Features VDS (V) =-60V ID =-20 A RDS(ON) 100m (VGS =-10V) RDS(ON) 185m (VGS =-4V) Low Ciss: Ciss = 1210 pF (TYP.)DrainBodyGate DiodeGateProtectionSourceDiode Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS -60VVGS(AC) 20 Gate-Sourc

SMD Type MOSFETMOS Field Effect Transistor2SJ492TO-263Unit: mmFeatures+0.24.57-0.2+0.11.27-0.1Low on-state resistanceRDS(on)1 = 100 m (MAX.) (VGS =-10V, ID =-10A)RDS(on)2 = 185 m (MAX.) (VGS =-4 V, ID =-10 A)+0.1Low Ciss: Ciss = 1210 pF (TYP.) 0.1max1.27-0.1Built-in gate protection diode+0.10.81-0.12.541Gate+0.22.54-0.2 +0.1 +0.25.08-0.1 0.4-0.22D