2SJ234L Todos los transistores

 

2SJ234L MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SJ234L

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 10 W

Tensión drenaje-fuente (Vds): 30 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 2.5 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tiempo de elevación (tr): 25 nS

Conductancia de drenaje-sustrato (Cd): 170 pF

Resistencia drenaje-fuente RDS(on): 0.4 Ohm

Empaquetado / Estuche: TO251

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2SJ234L Datasheet (PDF)

4.1. 2sj234s-l.pdf Size:54K _upd

2SJ234L
2SJ234L

2SJ234(L), 2SJ234(S) Silicon P-Channel MOS FET November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device  Can be driven from 5 V source • Suitable for DC-DC converter, motor drive, power switch, solenoid drive Outline DPAK-1 4 4 1 2 3 1 2 3 D 1. Gate G 2. Drain 3.

4.2. 2sj234s-l.pdf Size:54K _hitachi

2SJ234L
2SJ234L

2SJ234(L), 2SJ234(S) Silicon P-Channel MOS FET November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device  Can be driven from 5 V source • Suitable for DC-DC converter, motor drive, power switch, solenoid drive Outline DPAK-1 4 4 1 2 3 1 2 3 D 1. Gate G 2. Drain 3.

 5.1. 2sj239.pdf Size:152K _upd

2SJ234L
2SJ234L

5.2. 2sj238.pdf Size:329K _toshiba

2SJ234L
2SJ234L



 5.3. 2sj230.pdf Size:88K _sanyo

2SJ234L
2SJ234L

Ordering number:EN3815 P-Channel Silicon MOSFET 2SJ230 Ultrahigh-Speed Switching Applications Features Package Dimensions · Low ON resistance. unit:mm · Ultrahigh-speed switching. 2085A · Low-voltage drive. [2SJ230] 4.5 · Its height onboard is 9.5mm. 1.9 2.6 10.5 1.2 1.4 · Meets radial taping. 1.2 0.5 1.6 0.5 1 2 3 1 : Source 2 : Drain 3 : Gate 2.5 2.5 SANYO

5.4. 2sj231.pdf Size:86K _sanyo

2SJ234L
2SJ234L

Ordering number:EN3816 P-Channel Silicon MOSFET 2SJ231 Ultrahigh-Speed Switching Applications Features Package Dimensions · Low ON resistance. unit:mm · Ultrahigh-speed switching. 2087A · Low-voltage drive. [2SJ231] 2.5 · Meets radial taping. 1.45 6.9 1.0 0.6 0.9 0.5 1 2 3 0.45 1 : Source 2 : Drain 3 : Gate 2.54 2.54 SANYO : NMP Specifications Absolute Maximum R

 5.5. 2sj233.pdf Size:88K _sanyo

2SJ234L
2SJ234L

Ordering number:EN3818 P-Channel Silicon MOSFET 2SJ233 Ultrahigh-Speed Switching Applications Features Package Dimensions · Low ON resistance. unit:mm · Ultrahigh-speed switching. 2085A · Low-voltage drive. [2SJ233] 4.5 · Its height onboard is 9.5mm. 1.9 2.6 10.5 1.2 1.4 · Meets radial taping. 1.2 0.5 1.6 0.5 1 2 3 1 : Source 2 : Drain 3 : Gate 2.5 2.5 SANYO

5.6. 2sj232.pdf Size:88K _sanyo

2SJ234L
2SJ234L

Ordering number:EN3817 P-Channel Silicon MOSFET 2SJ232 Ultrahigh-Speed Switching Applications Features Package Dimensions · Low ON resistance. unit:mm · Ultrahigh-speed switching. 2085A · Low-voltage drive. [2SJ232] 4.5 · Its height onboard is 9.5mm. 1.9 2.6 10.5 1.2 1.4 · Meets radial taping. 1.2 0.5 1.6 0.5 1 2 3 1 : Source 2 : Drain 3 : Gate 2.5 2.5 SANYO

Otros transistores... CED6861 , CED95P04 , CEF14P20 , CEF15P15 , CEF6601 , CEH2305 , CEH2313 , CEH2321 , 2SK170 , CEH2331 , CEH3456 , CEM2163 , CEM2187 , CEM2281 , CEM2401 , CEM2407 , CEM3053 .

 

 
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