All MOSFET. 2SJ234L Datasheet

 

2SJ234L MOSFET. Datasheet pdf. Equivalent

Type Designator: 2SJ234L

Type of Transistor: MOSFET

Type of Control Channel: P -Channel

Maximum Power Dissipation (Pd): 10 W

Maximum Drain-Source Voltage |Vds|: 30 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Drain Current |Id|: 2.5 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 25 nS

Drain-Source Capacitance (Cd): 170 pF

Maximum Drain-Source On-State Resistance (Rds): 0.4 Ohm

Package: TO251

2SJ234L Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

2SJ234L Datasheet (PDF)

4.1. 2sj234s-l.pdf Size:54K _upd

2SJ234L
2SJ234L

2SJ234(L), 2SJ234(S) Silicon P-Channel MOS FET November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device  Can be driven from 5 V source • Suitable for DC-DC converter, motor drive, power switch, solenoid drive Outline DPAK-1 4 4 1 2 3 1 2 3 D 1. Gate G 2. Drain 3.

4.2. 2sj234s-l.pdf Size:54K _hitachi

2SJ234L
2SJ234L

2SJ234(L), 2SJ234(S) Silicon P-Channel MOS FET November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device  Can be driven from 5 V source • Suitable for DC-DC converter, motor drive, power switch, solenoid drive Outline DPAK-1 4 4 1 2 3 1 2 3 D 1. Gate G 2. Drain 3.

 5.1. 2sj239.pdf Size:152K _upd

2SJ234L
2SJ234L

5.2. 2sj239.pdf Size:152K _toshiba

2SJ234L
2SJ234L

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 5.3. 2sj238.pdf Size:329K _toshiba

2SJ234L
2SJ234L

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5.4. 2sj230.pdf Size:88K _sanyo

2SJ234L
2SJ234L

Ordering number:EN3815 P-Channel Silicon MOSFET 2SJ230 Ultrahigh-Speed Switching Applications Features Package Dimensions · Low ON resistance. unit:mm · Ultrahigh-speed switching. 2085A · Low-voltage drive. [2SJ230] 4.5 · Its height onboard is 9.5mm. 1.9 2.6 10.5 1.2 1.4 · Meets radial taping. 1.2 0.5 1.6 0.5 1 2 3 1 : Source 2 : Drain 3 : Gate 2.5 2.5 SANYO

 5.5. 2sj231.pdf Size:86K _sanyo

2SJ234L
2SJ234L

Ordering number:EN3816 P-Channel Silicon MOSFET 2SJ231 Ultrahigh-Speed Switching Applications Features Package Dimensions · Low ON resistance. unit:mm · Ultrahigh-speed switching. 2087A · Low-voltage drive. [2SJ231] 2.5 · Meets radial taping. 1.45 6.9 1.0 0.6 0.9 0.5 1 2 3 0.45 1 : Source 2 : Drain 3 : Gate 2.54 2.54 SANYO : NMP Specifications Absolute Maximum R

5.6. 2sj233.pdf Size:88K _sanyo

2SJ234L
2SJ234L

Ordering number:EN3818 P-Channel Silicon MOSFET 2SJ233 Ultrahigh-Speed Switching Applications Features Package Dimensions · Low ON resistance. unit:mm · Ultrahigh-speed switching. 2085A · Low-voltage drive. [2SJ233] 4.5 · Its height onboard is 9.5mm. 1.9 2.6 10.5 1.2 1.4 · Meets radial taping. 1.2 0.5 1.6 0.5 1 2 3 1 : Source 2 : Drain 3 : Gate 2.5 2.5 SANYO

5.7. 2sj232.pdf Size:88K _sanyo

2SJ234L
2SJ234L

Ordering number:EN3817 P-Channel Silicon MOSFET 2SJ232 Ultrahigh-Speed Switching Applications Features Package Dimensions · Low ON resistance. unit:mm · Ultrahigh-speed switching. 2085A · Low-voltage drive. [2SJ232] 4.5 · Its height onboard is 9.5mm. 1.9 2.6 10.5 1.2 1.4 · Meets radial taping. 1.2 0.5 1.6 0.5 1 2 3 1 : Source 2 : Drain 3 : Gate 2.5 2.5 SANYO

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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