2SJ297L Todos los transistores

 

2SJ297L MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SJ297L

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 60 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 20 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 130 nS

Cossⓘ - Capacitancia de salida: 1000 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.065 Ohm

Encapsulados: TO263

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2SJ297L datasheet

 0.1. Size:23K  hitachi
 2sj297l-s.pdf pdf_icon

2SJ297L

2SJ297(L), 2SJ297(S) Silicon P-Channel MOS FET November 1996 Application High speed power switching Features Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for switching regulator, DC-DC converter Avalanche ratings Outline LDPAK 4 4 1 2 3 1 2 3 D G 1. Gate 2. Drain 3. Sourc

 9.1. Size:22K  hitachi
 2sj292.pdf pdf_icon

2SJ297L

2SJ292 Silicon P-Channel MOS FET November 1996 Application High speed power switching Features Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for switching regulator, DC-DC converter Avalanche ratings Outline TO-220AB 1 D 2 3 1. Gate G 2. Drain (Flange) 3. Source S 2SJ292

 9.2. Size:25K  hitachi
 2sj294.pdf pdf_icon

2SJ297L

2SJ294 Silicon P Channel MOS FET Application TO 220FM High speed power switching Features Low on resistance High speed switching 2 Low drive current 1 2 3 4 V gate drive device can be driven from 1 5 V source Suitable for Switching regulator, DC DC 1. Gate converter 2. Drain Avalanche Ratings 3. Source 3 Table 1 Absolute Maximum Ratings (T

 9.3. Size:30K  hitachi
 2sj293.pdf pdf_icon

2SJ297L

2SJ293 Silicon P-Channel MOS FET November 1996 Application High speed power switching Features Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for switching regulator, DC-DC converter Avalanche ratings Outline TO-220FM D 1 2 3 1. Gate G 2. Drain 3. Source S 2SJ293 Absolute Ma

MOSTRAR MÁS

Otros transistores... 2SJ474-01S , 2SJ234L , 2SJ234S , 2SJ239 , 2SJ240 , 2SJ241 , 2SJ296L , 2SJ296S , IRF2807 , 2SJ297S , 2SJ492 , 2SJ302-Z , 2SJ314-01L , 2SJ314-01S , 2SJ324-Z , 2SJ325-Z , 2SJ326-Z .

 

 

 

 

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