All MOSFET. 2SJ297L Datasheet

 

2SJ297L MOSFET. Datasheet pdf. Equivalent

Type Designator: 2SJ297L

Type of Transistor: MOSFET

Type of Control Channel: P -Channel

Maximum Power Dissipation (Pd): 60 W

Maximum Drain-Source Voltage |Vds|: 60 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Drain Current |Id|: 20 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 130 nS

Drain-Source Capacitance (Cd): 1000 pF

Maximum Drain-Source On-State Resistance (Rds): 0.065 Ohm

Package: TO263

2SJ297L Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

2SJ297L Datasheet (PDF)

1.1. 2sj297l-s.pdf Size:23K _upd

2SJ297L 2SJ297L

2SJ297(L), 2SJ297(S) Silicon P-Channel MOS FET November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device can be driven from 5 V source • Suitable for switching regulator, DC-DC converter • Avalanche ratings Outline LDPAK 4 4 1 2 3 1 2 3 D G 1. Gate 2. Drain 3. Sourc

5.1. 2sj296l-s.pdf Size:50K _upd

2SJ297L 2SJ297L

www.DataSheet4U.com 2SJ296(L), 2SJ296(S) Silicon P-Channel MOS FET November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device can be driven from 5 V source • Suitable for switching regulator, DC-DC converter • Avalanche ratings Outline LDPAK 4 4 1 2 3 1 2 3 D G 1. Gate

5.2. 2sj292.pdf Size:22K _hitachi

2SJ297L 2SJ297L

2SJ292 Silicon P-Channel MOS FET November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device can be driven from 5 V source • Suitable for switching regulator, DC-DC converter • Avalanche ratings Outline TO-220AB 1 D 2 3 1. Gate G 2. Drain (Flange) 3. Source S 2SJ292

 5.3. 2sj295.pdf Size:31K _hitachi

2SJ297L 2SJ297L

2SJ295 Silicon P-Channel MOS FET November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device can be driven from 5 V source • Suitable for switching regulator, DC-DC converter • Avalanche ratings Outline TO-220FM D 1 2 3 1. Gate G 2. Drain 3. Source S 2SJ295 Absolute Ma

5.4. 2sj294.pdf Size:25K _hitachi

2SJ297L 2SJ297L

2SJ294 Silicon P Channel MOS FET Application TO–220FM High speed power switching Features • Low on–resistance • High speed switching 2 • Low drive current 1 2 3 • 4 V gate drive device can be driven from 1 5 V source • Suitable for Switching regulator, DC – DC 1. Gate converter 2. Drain • Avalanche Ratings 3. Source 3 Table 1 Absolute Maximum Ratings (T

 5.5. 2sj293.pdf Size:30K _hitachi

2SJ297L 2SJ297L

2SJ293 Silicon P-Channel MOS FET November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device can be driven from 5 V source • Suitable for switching regulator, DC-DC converter • Avalanche ratings Outline TO-220FM D 1 2 3 1. Gate G 2. Drain 3. Source S 2SJ293 Absolute Ma

Datasheet: CEM2401 , CEM2407 , CEM3053 , CEM3083 , CEM3301 , CEM3307 , CEM3317 , CEM3405L , BUZ10 , CEM4201 , CEM4207 , CEM4301 , CEM4311 , CEM4435A , CEM4948 , CEM4953 , CEM4953A .

 

 
Back to Top