2SJ297L
MOSFET. Datasheet pdf. Equivalent
Type Designator: 2SJ297L
Type of Transistor: MOSFET
Type of Control Channel: P
-Channel
Pdⓘ
- Maximum Power Dissipation: 60
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Id|ⓘ - Maximum Drain Current: 20
A
Tjⓘ - Maximum Junction Temperature: 150
°C
trⓘ - Rise Time: 130
nS
Cossⓘ -
Output Capacitance: 1000
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.065
Ohm
Package:
TO263
2SJ297L
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
2SJ297L
Datasheet (PDF)
0.1. Size:23K hitachi
2sj297l-s.pdf
2SJ297(L), 2SJ297(S)Silicon P-Channel MOS FETNovember 1996ApplicationHigh speed power switchingFeatures Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for switching regulator, DC-DC converter Avalanche ratingsOutlineLDPAK44123123DG1. Gate 2. Drain 3. Sourc
9.1. Size:22K hitachi
2sj292.pdf
2SJ292Silicon P-Channel MOS FETNovember 1996ApplicationHigh speed power switchingFeatures Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for switching regulator, DC-DC converter Avalanche ratingsOutlineTO-220AB1D231. Gate G2. Drain (Flange) 3. SourceS2SJ292
9.2. Size:25K hitachi
2sj294.pdf
2SJ294Silicon P Channel MOS FETApplicationTO220FMHigh speed power switchingFeatures Low onresistance High speed switching2 Low drive current123 4 V gate drive device can be driven from15 V source Suitable for Switching regulator, DC DC 1. Gateconverter2. Drain Avalanche Ratings3. Source3Table 1 Absolute Maximum Ratings (T
9.3. Size:30K hitachi
2sj293.pdf
2SJ293Silicon P-Channel MOS FETNovember 1996ApplicationHigh speed power switchingFeatures Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for switching regulator, DC-DC converter Avalanche ratingsOutlineTO-220FMD1231. Gate G2. Drain 3. SourceS2SJ293Absolute Ma
9.4. Size:50K hitachi
2sj296l-s.pdf
www.DataSheet4U.com2SJ296(L), 2SJ296(S)Silicon P-Channel MOS FETNovember 1996ApplicationHigh speed power switchingFeatures Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for switching regulator, DC-DC converter Avalanche ratingsOutlineLDPAK44123123DG1. Gate
9.5. Size:31K hitachi
2sj295.pdf
2SJ295Silicon P-Channel MOS FETNovember 1996ApplicationHigh speed power switchingFeatures Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for switching regulator, DC-DC converter Avalanche ratingsOutlineTO-220FMD1231. Gate G2. Drain 3. SourceS2SJ295Absolute Ma
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