2SJ297S MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SJ297S
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 60 W
Voltaje máximo drenador - fuente |Vds|: 60 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 20 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tiempo de subida (tr): 130 nS
Conductancia de drenaje-sustrato (Cd): 1000 pF
Resistencia entre drenaje y fuente RDS(on): 0.065 Ohm
Paquete / Cubierta: TO263
Búsqueda de reemplazo de MOSFET 2SJ297S
2SJ297S Datasheet (PDF)
2sj297l-s.pdf
2SJ297(L), 2SJ297(S)Silicon P-Channel MOS FETNovember 1996ApplicationHigh speed power switchingFeatures Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for switching regulator, DC-DC converter Avalanche ratingsOutlineLDPAK44123123DG1. Gate 2. Drain 3. Sourc
2sj292.pdf
2SJ292Silicon P-Channel MOS FETNovember 1996ApplicationHigh speed power switchingFeatures Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for switching regulator, DC-DC converter Avalanche ratingsOutlineTO-220AB1D231. Gate G2. Drain (Flange) 3. SourceS2SJ292
2sj294.pdf
2SJ294Silicon P Channel MOS FETApplicationTO220FMHigh speed power switchingFeatures Low onresistance High speed switching2 Low drive current123 4 V gate drive device can be driven from15 V source Suitable for Switching regulator, DC DC 1. Gateconverter2. Drain Avalanche Ratings3. Source3Table 1 Absolute Maximum Ratings (T
2sj293.pdf
2SJ293Silicon P-Channel MOS FETNovember 1996ApplicationHigh speed power switchingFeatures Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for switching regulator, DC-DC converter Avalanche ratingsOutlineTO-220FMD1231. Gate G2. Drain 3. SourceS2SJ293Absolute Ma
2sj296l-s.pdf
www.DataSheet4U.com2SJ296(L), 2SJ296(S)Silicon P-Channel MOS FETNovember 1996ApplicationHigh speed power switchingFeatures Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for switching regulator, DC-DC converter Avalanche ratingsOutlineLDPAK44123123DG1. Gate
2sj295.pdf
2SJ295Silicon P-Channel MOS FETNovember 1996ApplicationHigh speed power switchingFeatures Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for switching regulator, DC-DC converter Avalanche ratingsOutlineTO-220FMD1231. Gate G2. Drain 3. SourceS2SJ295Absolute Ma
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