2SJ297S Todos los transistores

 

2SJ297S MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2SJ297S
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 60 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 20 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 130 nS
   Cossⓘ - Capacitancia de salida: 1000 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.065 Ohm
   Paquete / Cubierta: TO263
 

 Búsqueda de reemplazo de 2SJ297S MOSFET

   - Selección ⓘ de transistores por parámetros

 

2SJ297S Datasheet (PDF)

 8.1. Size:23K  hitachi
 2sj297l-s.pdf pdf_icon

2SJ297S

2SJ297(L), 2SJ297(S)Silicon P-Channel MOS FETNovember 1996ApplicationHigh speed power switchingFeatures Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for switching regulator, DC-DC converter Avalanche ratingsOutlineLDPAK44123123DG1. Gate 2. Drain 3. Sourc

 9.1. Size:22K  hitachi
 2sj292.pdf pdf_icon

2SJ297S

2SJ292Silicon P-Channel MOS FETNovember 1996ApplicationHigh speed power switchingFeatures Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for switching regulator, DC-DC converter Avalanche ratingsOutlineTO-220AB1D231. Gate G2. Drain (Flange) 3. SourceS2SJ292

 9.2. Size:25K  hitachi
 2sj294.pdf pdf_icon

2SJ297S

2SJ294Silicon P Channel MOS FETApplicationTO220FMHigh speed power switchingFeatures Low onresistance High speed switching2 Low drive current123 4 V gate drive device can be driven from15 V source Suitable for Switching regulator, DC DC 1. Gateconverter2. Drain Avalanche Ratings3. Source3Table 1 Absolute Maximum Ratings (T

 9.3. Size:30K  hitachi
 2sj293.pdf pdf_icon

2SJ297S

2SJ293Silicon P-Channel MOS FETNovember 1996ApplicationHigh speed power switchingFeatures Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for switching regulator, DC-DC converter Avalanche ratingsOutlineTO-220FMD1231. Gate G2. Drain 3. SourceS2SJ293Absolute Ma

MOSTRAR MÁS

Otros transistores... 2SJ234L , 2SJ234S , 2SJ239 , 2SJ240 , 2SJ241 , 2SJ296L , 2SJ296S , 2SJ297L , IRFZ24N , 2SJ492 , 2SJ302-Z , 2SJ314-01L , 2SJ314-01S , 2SJ324-Z , 2SJ325-Z , 2SJ326-Z , 2SJ327-Z .

History: AP4610P | TDM3408 | TPCA8008-H | NTD5865N-1G | CEF04N7G | AUIRF4905L | 2SK2057

 

 
Back to Top

 


 
.