IRFBL12N50A MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: IRFBL12N50A
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 180 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 500 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 13 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 64(max) nC
   trⓘ - Tiempo de subida: 53 nS
   Cossⓘ - Capacitancia de salida: 290 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.45 Ohm
   Paquete / Cubierta: SUPERD2PAK

Búsqueda de reemplazo de MOSFET IRFBL12N50A

IRFBL12N50A Datasheet (PDF)

..1. Size:175K international rectifier
irfbl12n50a.pdf

PD - 91818ASMPS MOSFETIRFBL12N50AHEXFET Power MOSFETApplicationsVDSS RDS(on) max ID Switch Mode Power Supply (SMPS) Uninterruptible Power Supply 500V 0.45 13A High Speed Power SwitchingBenefits Low Gate Charge Qg Results in SimpleDrive Requirement Improved Gate, Avalanche and Dynamicdv/dt Ruggedness Fully Characterized Capacitance andSuper-D2PakTMAvalanche V

8.1. Size:120K international rectifier
irfbl10n60a.pdf

PD - 91819CSMPS MOSFETIRFBL10N60AHEXFET Power MOSFETApplicationsVDSS Rds(on) max ID Switch Mode Power Supply ( SMPS ) Uninterruptable Power Supply 600V 0.61 11A High Speed Power SwitchingBenefits Low Gate Charge Qg results in simpleDrive Requirement Improved Gate, Avalanche and Dynamicdv/dt Ruggedness Fully Characterized Capacitance andAvalanche Voltage and Cu

8.2. Size:29K international rectifier
irfbl18n50k.pdf

PD- 93928PROVISIONALIRFBL18N50KSMPS MOSFETHEXFET Power MOSFETApplicationsVDSS RDS(on) ID Telecom and Data-Com off-Line SMPS UninterruptIble Power Supply500V 0.25 18ABenefits Low On-Resistance High Speed Switching Low Gate Drive Current Due to ImprovedGate Charge Characteristics Improved Avalanche Ruggedness andDynamic dv/dt, Fully CharacterizedAvalanche Vo

8.3. Size:29K international rectifier
irfbl17n50l.pdf

PD- 93929PROVISIONALIRFBL17N50LSMPS MOSFETHEXFET Power MOSFETApplicationsVDSS RDS(on) ID Telecom and Data-Com off-Line SMPS Motor Control500V 0.28 17A UninterruptIble Power SupplyBenefits Low On-Resistance High Speed Switching Low Gate Drive Current Due to ImprovedGate Charge Characteristics Built in Fast Recovery Diode Improved Avalanche Ruggedness andD

Otros transistores... IRFBE30 , IRFBF20 , IRFBF20L , IRFBF20S , IRFBF30 , IRFBG20 , IRFBG30 , IRFBL10N60A , AO4468 , IRFD014 , IRFD024 , IRFD110 , IRFD120 , IRFD210 , IRFD214 , IRFD220 , IRFD224 .

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