2SJ389L Todos los transistores

 

2SJ389L MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SJ389L

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 30 W

Tensión drenaje-fuente (Vds): 60 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 10 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tiempo de elevación (tr): 85 nS

Conductancia de drenaje-sustrato (Cd): 440 pF

Resistencia drenaje-fuente RDS(on): 0.135 Ohm

Empaquetado / Estuche: TO251

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2SJ389L Datasheet (PDF)

1.1. 2sj389l-s.pdf Size:48K _upd

2SJ389L
2SJ389L

2SJ389 L , 2SJ389 S Silicon P Channel MOS FET Application DPAK–2 4 High speed power switching 4 Features 1 2 3 • Low on–resistance 2, 4 • High speed switching 1 2 3 • Low drive current • 4 V gate drive device can be driven from 1 5 V source 1. Gate • Suitable for Switching regulator, DC – DC 2. Drain converter 3. Source • Avalanche Ratings 3 4. Drai

5.1. 2sj380.pdf Size:320K _toshiba

2SJ389L
2SJ389L



5.2. 2sj381.pdf Size:106K _sanyo

2SJ389L
2SJ389L

Ordering number:EN5296A P-Channel Silicon MOSFET 2SJ381 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON-resistance. unit:mm Ultrahigh-speed switching. 2062A 2.5V drive. [2SJ381] 4.5 1.5 1.6 0.4 0.5 3 2 1 0.4 1.5 3.0 1 : Gate 2 : Drain 0.75 3 : Source SANYO : PCP (Bottom view) Specifications Absolute Maximum Ratings at Ta = 25?C Paramete

 5.3. 2sj382.pdf Size:96K _sanyo

2SJ389L
2SJ389L

Ordering number:EN5057 P-Channel Silicon MOSFET 2SJ382 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit:mm Ultrahigh-speed switching. 2083B 2.5V drive. [2SJ382] 6.5 2.3 5.0 0.5 4 0.85 0.7 1.2 1 : Gate 0.6 0.5 2 : Drain 1 2 3 3 : Source 4 : Drain 2.3 2.3 SANYO : TP unit:mm 2092B [2SJ382] 6.5 2.3 5.0 0.5 4 0.5 0.85

5.4. 2sj383.pdf Size:110K _sanyo

2SJ389L
2SJ389L

Ordering number:EN5297A P-Channel Silicon MOSFET 2SJ383 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit:mm Ultrahigh-speed switching. 2083B 2.5V drive. [2SJ383] 6.5 2.3 5.0 0.5 4 0.85 0.7 1.2 1 : Gate 0.6 0.5 2 : Drain 1 2 3 3 : Source 4 : Drain 2.3 2.3 SANYO : TP unit:mm 2092B [2SJ383] 6.5 2.3 5.0 0.5 4 0.5 0.8

 5.5. 2sj387.pdf Size:88K _renesas

2SJ389L
2SJ389L

2SJ387(L), 2SJ387(S) Silicon P Channel MOS FET REJ03G0862-0200 (Previous: ADE-208-1196) Rev.2.00 Sep 07, 2005 Description High speed power switching Features Low on-resistance Low drive current 2.5 V Gate drive device can be driven from 3 V Source Suitable for Switching regulator, DC-DC converter Outline RENESAS Package code: PRSS0004ZD-B RENESAS Package code: P

5.6. rej03g0862 2sj387lsds.pdf Size:101K _renesas

2SJ389L
2SJ389L

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

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