2SJ389L Datasheet and Replacement
Type Designator: 2SJ389L
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 30 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 10 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 85 nS
Cossⓘ - Output Capacitance: 440 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.135 Ohm
Package: TO251
2SJ389L substitution
2SJ389L Datasheet (PDF)
2sj389l-s.pdf

2SJ389 L , 2SJ389 SSilicon P Channel MOS FETApplicationDPAK24High speed power switching4Features123 Low onresistance2, 4 High speed switching123 Low drive current 4 V gate drive device can be driven from15 V source1. Gate Suitable for Switching regulator, DC DC 2. Drainconverter3. Source Avalanche Ratings3 4. Drai
2sj389s.pdf

2SJ389Swww.VBsemi.twP-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) Qg (Typ) 100 % UIS Tested0.061 at VGS = - 10 V - 30APPLICATIONS- 60 100.072 at VGS = - 4.5 V - 26 Load SwitchSTO-252GG D STop ViewDP-Channel MOSFETABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise notedParameter Symbo
2sj389s.pdf

isc P-Channel MOSFET Transistor 2SJ389SFEATURESStatic drain-source on-resistance:RDS(on)135m(@V = -10V; I = -5A)GS DHigh speed switchingLow drive current100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh speed power switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER
Datasheet: 2SJ327-Z , 2SJ328-Z , 2SJ332L , 2SJ332S , 2SJ355 , 2SJ357 , 2SJ358 , 2SJ358C , 8N60 , 2SJ389S , 2SJ409L , 2SJ409S , 2SJ461A , 2SJ475-01 , 2SJ476-01L , 2SJ476-01S , 2SJ477-01MR .
History: IPB80N06S2L-11 | SI8410DB | AP30T10GK
Keywords - 2SJ389L MOSFET datasheet
2SJ389L cross reference
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History: IPB80N06S2L-11 | SI8410DB | AP30T10GK



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