2SJ389L PDF and Equivalents Search

2SJ389 L , 2SJ389 S Silicon P Channel MOS FET Application DPAK 2 4 High speed power switching 4 Features 1 2 3 Low on resistance 2, 4 High speed switching 1 2 3 Low drive current 4 V gate drive device can be driven from 1 5 V source 1. Gate Suitable for Switching regulator, DC DC 2. Drain converter 3. Source Avalanche Ratings 3 4. Drai... See More ⇒

2SJ389S www.VBsemi.tw P-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A) Qg (Typ) 100 % UIS Tested 0.061 at VGS = - 10 V - 30 APPLICATIONS - 60 10 0.072 at VGS = - 4.5 V - 26 Load Switch S TO-252 G G D S Top View D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise noted Parameter Symbo... See More ⇒

isc P-Channel MOSFET Transistor 2SJ389S FEATURES Static drain-source on-resistance RDS(on) 135m (@V = -10V; I = -5A) GS D High speed switching Low drive current 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High speed power switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER ... See More ⇒