2SJ477-01MR Todos los transistores

 ..1. Size:293K  fuji
 2sj477-01mr.pdf

2SJ477-01MR FUJI POWER MOSFET P-CHANNEL SILICON POWER MOSFET FAP-III SERIES Features Outline Drawings TO-220F High speed switching Low on-resistance No secondary breakdown Low driving power High forward Transconductance Avalanche-proof Applications Switching regulators DC-DC converters General purpose power amplifier Maximum ratings and characteristics Absolute maximum rating

 ..2. Size:257K  inchange semiconductor
 2sj477-01mr.pdf

Isc P-Channel MOSFET Transistor 2SJ477-01MR FEATURES With TO-220F package Low input capacitance and gate charges Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications Load switch Power management ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETE

 9.1. Size:92K  renesas
 2sj479.pdf

2SJ479(L), 2SJ479(S) Silicon P Channel MOS FET REJ03G0866-0300 Rev.3.00 Jun 05, 2006 Description High speed power switching Features Low on-resistance RDS (on) = 25 m typ. 4 V gate drive devices. High speed switching Outline RENESAS Package code PRSS0004AE-A RENESAS Package code PRSS0004AE-B (Package name LDPAK (L) ) (Package name LDPAK (S)-(1) ) D

 9.2. Size:105K  renesas
 rej03g0866 2sj479lsds.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 9.3. Size:295K  fuji
 2sj475-01.pdf

2SJ475-01 FUJI POWER MOSFET P-CHANNEL SILICON POWER MOSFET FAP-III SERIES Features Outline Drawings TO-220AB High speed switching Low on-resistance No secondary breakdown Low driving power High forward Transconductance Avalanche-proof Applications Switching regulators DC-DC converters General purpose power amplifier Maximum ratings and characteristics Absolute maximum ratings

 9.4. Size:526K  fuji
 2sj474-01l-s.pdf

2SJ474-01L,S FUJI POWER MOSFET Characteristics 2 2SJ474-01L,S FUJI POWER MOSFET 3 2SJ474-01L,S FUJI POWER MOSFET 4

 9.5. Size:236K  fuji
 2sj473-01l-s.pdf

FUJI POWER MOSFET 2SJ473-01L,S P-CHANNEL SILICON POWER MOSFET FAP-III SERIES Outline Drawings Features K-Pack(L) K-Pack(S) High speed switching Low on-resistance No secondary breakdown Low driving power High forward Transconductance Avalanche-proof Applications Switching regulators DC-DC converters General purpose power amplifier L-type S-type EIAJ Maximum ratings and chara

 9.6. Size:302K  fuji
 2sj476-01l-s.pdf

2SJ476-01L,S FUJI POWER MOSFET P-CHANNEL SILICON POWER MOSFET FAP-III SERIES Outline Drawings Features T-Pack(L) T-Pack(S) High speed switching Low on-resistance No secondary breakdown Low driving power High forward Transconductance Avalanche-proof Applications Switching regulators DC-DC converters General purpose power amplifier L-type S-type EIAJ Maximum ratings and char

 9.7. Size:243K  fuji
 2sj472-01l-s.pdf

FUJI POWER MOSFET 2SJ472-01L,S P-CHANNEL SILICON POWER MOSFET FAP-III SERIES Outline Drawings Features K-Pack(L) K-Pack(S) High speed switching Low on-resistance No secondary breakdown Low driving power High forward Transconductance Avalanche-proof Applications Switching regulators DC-DC converters General purpose power amplifier L-type S-type EIAJ Maximum ratings and chara

 9.8. Size:48K  hitachi
 2sj471.pdf

2SJ471 Silicon P Channel DV L MOS FET High Speed Power Switching ADE-208-540 1st. Edition Features Low on-resistance RDS(on) = 25 m typ. 4V gate drive devices. High speed switching Outline TO 220CFM D G 1 2 3 1. Gate 2. Drain S 3. Source 2SJ471 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Drain to source voltage VDSS 30 V Gate to