2SJ477-01MRFUJI POWER MOSFETP-CHANNEL SILICON POWER MOSFETFAP-III SERIESFeaturesOutline DrawingsTO-220FHigh speed switchingLow on-resistanceNo secondary breakdownLow driving powerHigh forward TransconductanceAvalanche-proofApplicationsSwitching regulators DC-DC convertersGeneral purpose power amplifierMaximum ratings and characteristicsAbsolute maximum rating

Isc P-Channel MOSFET Transistor 2SJ477-01MRFEATURESWith TO-220F packageLow input capacitance and gate chargesLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsLoad switchPower managementABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETE

2SJ479(L), 2SJ479(S) Silicon P Channel MOS FET REJ03G0866-0300 Rev.3.00 Jun 05, 2006 Description High speed power switching Features Low on-resistance RDS (on) = 25 m typ. 4 V gate drive devices. High speed switching Outline RENESAS Package code: PRSS0004AE-A RENESAS Package code: PRSS0004AE-B(Package name: LDPAK (L) ) (Package name: LDPAK (S)-(1) )D

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

2SJ475-01FUJI POWER MOSFETP-CHANNEL SILICON POWER MOSFETFAP-III SERIESFeaturesOutline DrawingsTO-220ABHigh speed switchingLow on-resistanceNo secondary breakdownLow driving powerHigh forward TransconductanceAvalanche-proofApplicationsSwitching regulators DC-DC convertersGeneral purpose power amplifierMaximum ratings and characteristicsAbsolute maximum ratings

2SJ474-01L,SFUJI POWER MOSFETCharacteristics22SJ474-01L,SFUJI POWER MOSFET32SJ474-01L,SFUJI POWER MOSFET4

FUJI POWER MOSFET2SJ473-01L,SP-CHANNEL SILICON POWER MOSFETFAP-III SERIESOutline DrawingsFeaturesK-Pack(L)K-Pack(S)High speed switchingLow on-resistanceNo secondary breakdownLow driving powerHigh forward TransconductanceAvalanche-proofApplicationsSwitching regulators DC-DC convertersGeneral purpose power amplifierL-type S-typeEIAJMaximum ratings and chara

2SJ476-01L,SFUJI POWER MOSFETP-CHANNEL SILICON POWER MOSFETFAP-III SERIESOutline DrawingsFeaturesT-Pack(L)T-Pack(S)High speed switchingLow on-resistanceNo secondary breakdownLow driving powerHigh forward TransconductanceAvalanche-proofApplicationsSwitching regulators DC-DC convertersGeneral purpose power amplifierL-typeS-typeEIAJMaximum ratings and char

FUJI POWER MOSFET2SJ472-01L,SP-CHANNEL SILICON POWER MOSFETFAP-III SERIESOutline DrawingsFeaturesK-Pack(L)K-Pack(S)High speed switchingLow on-resistanceNo secondary breakdownLow driving powerHigh forward TransconductanceAvalanche-proofApplicationsSwitching regulators DC-DC convertersGeneral purpose power amplifierL-type S-typeEIAJMaximum ratings and chara

2SJ471Silicon P Channel DVL MOS FETHigh Speed Power SwitchingADE-208-5401st. EditionFeatures Low on-resistanceRDS(on) = 25 m typ. 4V gate drive devices. High speed switchingOutlineTO220CFMDG1231. Gate2. DrainS 3. Source2SJ471Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitDrain to source voltage VDSS 30 VGate to