IRFD110
MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRFD110
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 1.3
W
|Vds|ⓘ - Voltaje máximo drenador - fuente: 100
V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20
V
|Id|ⓘ - Corriente continua de drenaje: 1
A
Tjⓘ - Temperatura máxima de unión: 175
°C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4
V
Qgⓘ - Carga de la puerta: 8.3(max)
nC
trⓘ - Tiempo de subida: 16
nS
Cossⓘ - Capacitancia
de salida: 81
pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.54
Ohm
Paquete / Cubierta: HD-1
- Selección de transistores por parámetros
IRFD110
Datasheet (PDF)
..2. Size:1803K international rectifier
irfd110pbf.pdf 
PD- 95927IRFD110PbF Lead-Free10/27/04Document Number: 91127 www.vishay.com1IRFD110PbFDocument Number: 91127 www.vishay.com2IRFD110PbFDocument Number: 91127 www.vishay.com3IRFD110PbFDocument Number: 91127 www.vishay.com4IRFD110PbFDocument Number: 91127 www.vishay.com5IRFD110PbFDocument Number: 91127 www.vishay.com6IRFD110PbFPeak Diode Recovery
..3. Size:147K vishay
irfd110 sihfd110.pdf 
IRFD110, SiHFD110Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 100Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 0.54RoHS* For Automatic InsertionQg (Max.) (nC) 8.3COMPLIANT End StackableQgs (nC) 2.3Qgd (nC) 3.8 175 C Operating TemperatureConfiguration Single Fast Switching and Ease of Parall
..4. Size:149K vishay
irfd110pbf sihfd110.pdf 
IRFD110, SiHFD110Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 100Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 0.54RoHS* For Automatic InsertionQg (Max.) (nC) 8.3COMPLIANT End StackableQgs (nC) 2.3Qgd (nC) 3.8 175 C Operating TemperatureConfiguration Single Fast Switching and Ease of Parall
8.1. Size:243K vishay
irfd113pbf sihfd113.pdf 
IRFD113, SiHFD113www.vishay.comVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY For Automatic InsertionVDS (V) 60 Compact Plastic PackageRDS(on) ()VGS = 10 V 0.8 End StackableQg (Max.) (nC) 7 Fast SwitchingQgs (nC) 2Qgd (nC) 7 Low Drive CurrentConfiguration Single Easily Paralleled Excellent Temperature Stability Compliant to Ro
8.2. Size:243K vishay
irfd113 sihfd113.pdf 
IRFD113, SiHFD113www.vishay.comVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY For Automatic InsertionVDS (V) 60 Compact Plastic PackageRDS(on) ()VGS = 10 V 0.8 End StackableQg (Max.) (nC) 7 Fast SwitchingQgs (nC) 2Qgd (nC) 7 Low Drive CurrentConfiguration Single Easily Paralleled Excellent Temperature Stability Compliant to Ro
9.1. Size:276K international rectifier
irfd123.pdf 
PD - 97015IRFD12306/09/05Document Number: 90161 www.vishay.com1IRFD123Document Number: 90161 www.vishay.com2IRFD123Document Number: 90161 www.vishay.com3IRFD123Document Number: 90161 www.vishay.com4IRFD123Document Number: 90161 www.vishay.com5IRFD123Document Number: 90161 www.vishay.com6IRFD123Peak Diode Recovery dv/dt Test Circuit+Circuit Lay
9.2. Size:1821K international rectifier
irfd120pbf.pdf 
PD- 95928IRFD120PbF Lead-Free10/27/04Document Number: 91128 www.vishay.com1IRFD120PbFDocument Number: 91128 www.vishay.com2IRFD120PbFDocument Number: 91128 www.vishay.com3IRFD120PbFDocument Number: 91128 www.vishay.com4IRFD120PbFDocument Number: 91128 www.vishay.com5IRFD120PbFDocument Number: 91128 www.vishay.com6IRFD120PbFPeak Diode Recovery
9.4. Size:1752K vishay
irfd123 sihfd123.pdf 
IRFD123, SiHFD123Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 100Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 0.27RoHS* For Automatic InsertionQg (Max.) (nC) 16COMPLIANT End StackableQgs (nC) 4.4Qgd (nC) 7.7 175 C Operating TemperatureConfiguration Single Fast SwitchingD Ease of Par
9.5. Size:1831K vishay
irfd123pbf.pdf 
IRFD123, SiHFD123Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 100Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 0.27RoHS* For Automatic InsertionQg (Max.) (nC) 16COMPLIANT End StackableQgs (nC) 4.4Qgd (nC) 7.7 175 C Operating TemperatureConfiguration Single Fast SwitchingD Ease of Par
9.6. Size:1828K vishay
irfd120 sihfd120.pdf 
IRFD120, SiHFD120Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 100Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 0.27RoHS* For Automatic InsertionQg (Max.) (nC) 16COMPLIANT End StackableQgs (nC) 4.4Qgd (nC) 7.7 175 C Operating TemperatureConfiguration Single Fast SwitchingD Ease of Par
9.7. Size:1829K vishay
irfd120pbf sihfd120.pdf 
IRFD120, SiHFD120Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 100Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 0.27RoHS* For Automatic InsertionQg (Max.) (nC) 16COMPLIANT End StackableQgs (nC) 4.4Qgd (nC) 7.7 175 C Operating TemperatureConfiguration Single Fast SwitchingD Ease of Par
Otros transistores... IRFBF20S
, IRFBF30
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, IRFBG30
, IRFBL10N60A
, IRFBL12N50A
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, IRFD310
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, IRFD420
.
History: AFN1530
| BUK7504-40A
| VS3698AD