IRFD110 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRFD110 📄📄
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 1.3 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 1 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 16 nS
Cossⓘ - Capacitancia de salida: 81 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.54 Ohm
Encapsulados: HD-1
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IRFD110 datasheet
..2. Size:1803K international rectifier
irfd110pbf.pdf 
PD- 95927 IRFD110PbF Lead-Free 10/27/04 Document Number 91127 www.vishay.com 1 IRFD110PbF Document Number 91127 www.vishay.com 2 IRFD110PbF Document Number 91127 www.vishay.com 3 IRFD110PbF Document Number 91127 www.vishay.com 4 IRFD110PbF Document Number 91127 www.vishay.com 5 IRFD110PbF Document Number 91127 www.vishay.com 6 IRFD110PbF Peak Diode Recovery
..3. Size:147K vishay
irfd110 sihfd110.pdf
IRFD110, SiHFD110 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 100 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 0.54 RoHS* For Automatic Insertion Qg (Max.) (nC) 8.3 COMPLIANT End Stackable Qgs (nC) 2.3 Qgd (nC) 3.8 175 C Operating Temperature Configuration Single Fast Switching and Ease of Parall
..4. Size:149K vishay
irfd110pbf sihfd110.pdf
IRFD110, SiHFD110 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 100 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 0.54 RoHS* For Automatic Insertion Qg (Max.) (nC) 8.3 COMPLIANT End Stackable Qgs (nC) 2.3 Qgd (nC) 3.8 175 C Operating Temperature Configuration Single Fast Switching and Ease of Parall
8.1. Size:243K vishay
irfd113pbf sihfd113.pdf
IRFD113, SiHFD113 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY For Automatic Insertion VDS (V) 60 Compact Plastic Package RDS(on) ( )VGS = 10 V 0.8 End Stackable Qg (Max.) (nC) 7 Fast Switching Qgs (nC) 2 Qgd (nC) 7 Low Drive Current Configuration Single Easily Paralleled Excellent Temperature Stability Compliant to Ro
8.2. Size:243K vishay
irfd113 sihfd113.pdf
IRFD113, SiHFD113 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY For Automatic Insertion VDS (V) 60 Compact Plastic Package RDS(on) ( )VGS = 10 V 0.8 End Stackable Qg (Max.) (nC) 7 Fast Switching Qgs (nC) 2 Qgd (nC) 7 Low Drive Current Configuration Single Easily Paralleled Excellent Temperature Stability Compliant to Ro
9.1. Size:276K international rectifier
irfd123.pdf
PD - 97015 IRFD123 06/09/05 Document Number 90161 www.vishay.com 1 IRFD123 Document Number 90161 www.vishay.com 2 IRFD123 Document Number 90161 www.vishay.com 3 IRFD123 Document Number 90161 www.vishay.com 4 IRFD123 Document Number 90161 www.vishay.com 5 IRFD123 Document Number 90161 www.vishay.com 6 IRFD123 Peak Diode Recovery dv/dt Test Circuit + Circuit Lay
9.2. Size:1821K international rectifier
irfd120pbf.pdf
PD- 95928 IRFD120PbF Lead-Free 10/27/04 Document Number 91128 www.vishay.com 1 IRFD120PbF Document Number 91128 www.vishay.com 2 IRFD120PbF Document Number 91128 www.vishay.com 3 IRFD120PbF Document Number 91128 www.vishay.com 4 IRFD120PbF Document Number 91128 www.vishay.com 5 IRFD120PbF Document Number 91128 www.vishay.com 6 IRFD120PbF Peak Diode Recovery
9.4. Size:1752K vishay
irfd123 sihfd123.pdf
IRFD123, SiHFD123 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 100 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 0.27 RoHS* For Automatic Insertion Qg (Max.) (nC) 16 COMPLIANT End Stackable Qgs (nC) 4.4 Qgd (nC) 7.7 175 C Operating Temperature Configuration Single Fast Switching D Ease of Par
9.5. Size:1831K vishay
irfd123pbf.pdf
IRFD123, SiHFD123 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 100 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 0.27 RoHS* For Automatic Insertion Qg (Max.) (nC) 16 COMPLIANT End Stackable Qgs (nC) 4.4 Qgd (nC) 7.7 175 C Operating Temperature Configuration Single Fast Switching D Ease of Par
9.6. Size:1828K vishay
irfd120 sihfd120.pdf
IRFD120, SiHFD120 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 100 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 0.27 RoHS* For Automatic Insertion Qg (Max.) (nC) 16 COMPLIANT End Stackable Qgs (nC) 4.4 Qgd (nC) 7.7 175 C Operating Temperature Configuration Single Fast Switching D Ease of Par
9.7. Size:1829K vishay
irfd120pbf sihfd120.pdf
IRFD120, SiHFD120 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 100 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 0.27 RoHS* For Automatic Insertion Qg (Max.) (nC) 16 COMPLIANT End Stackable Qgs (nC) 4.4 Qgd (nC) 7.7 175 C Operating Temperature Configuration Single Fast Switching D Ease of Par
Otros transistores... IRFBF20S, IRFBF30, IRFBG20, IRFBG30, IRFBL10N60A, IRFBL12N50A, IRFD014, IRFD024, EMB04N03H, IRFD120, IRFD210, IRFD214, IRFD220, IRFD224, IRFD310, IRFD320, IRFD420
