IRFD110 Datasheet and Replacement
Type Designator: IRFD110
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 1.3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 1 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 16 nS
Cossⓘ - Output Capacitance: 81 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.54 Ohm
Package: HD-1
IRFD110 substitution
IRFD110 Datasheet (PDF)
irfd110pbf.pdf
PD- 95927IRFD110PbF Lead-Free10/27/04Document Number: 91127 www.vishay.com1IRFD110PbFDocument Number: 91127 www.vishay.com2IRFD110PbFDocument Number: 91127 www.vishay.com3IRFD110PbFDocument Number: 91127 www.vishay.com4IRFD110PbFDocument Number: 91127 www.vishay.com5IRFD110PbFDocument Number: 91127 www.vishay.com6IRFD110PbFPeak Diode Recovery
irfd110 sihfd110.pdf
IRFD110, SiHFD110Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 100Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 0.54RoHS* For Automatic InsertionQg (Max.) (nC) 8.3COMPLIANT End StackableQgs (nC) 2.3Qgd (nC) 3.8 175 C Operating TemperatureConfiguration Single Fast Switching and Ease of Parall
irfd110pbf sihfd110.pdf
IRFD110, SiHFD110Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 100Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 0.54RoHS* For Automatic InsertionQg (Max.) (nC) 8.3COMPLIANT End StackableQgs (nC) 2.3Qgd (nC) 3.8 175 C Operating TemperatureConfiguration Single Fast Switching and Ease of Parall
Datasheet: IRFBF20S , IRFBF30 , IRFBG20 , IRFBG30 , IRFBL10N60A , IRFBL12N50A , IRFD014 , IRFD024 , AO3407 , IRFD120 , IRFD210 , IRFD214 , IRFD220 , IRFD224 , IRFD310 , IRFD320 , IRFD420 .
Keywords - IRFD110 MOSFET datasheet
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