AO4840E Todos los transistores

 ..1. Size:338K  aosemi
 ao4840e.pdf

AO4840E 40V Dual N-Channel AlphaMOS General Description Product Summary VDS Advanced trench technology 40V Low RDS(ON) ID (at VGS=10V) 6A Low Gate Charge RDS(ON) (at VGS=10V)

 8.1. Size:311K  aosemi
 ao4840.pdf

AO4840 40V Dual N-Channel MOSFET General Description Product Summary VDS 40V The AO4840 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate ID (at VGS=10V) 6A charge. This dual device is suitable for use as a load RDS(ON) (at VGS=10V)

 8.2. Size:1195K  kexin
 ao4840.pdf

SMD Type MOSFET Dual N-Channel MOSFET AO4840 (KO4840) SOP-8 Unit mm Features VDS (V) = 40V 1.50 0.15 ID = 6A (VGS = 10V) RDS(ON) 30m (VGS = 10V) RDS(ON) 38m (VGS = 4.5V) 1 S2 5 D1 6 D1 2 G2 7 D2 3 S1 8 D2 4 G1 D1 D2 G1 G2 S1 S2 Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage VDS 40 V Gate-So

 8.3. Size:907K  cn vbsemi
 ao4840.pdf

AO4840 www.VBsemi.tw Dual N-Channel 60 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET power MOSFET VDS (V) 60 100 % Rg and UIS tested RDS(on) ( ) at VGS = 10 V 0.040 RDS(on) ( ) at VGS = 4.5 V 0.055 ID (A) per leg 7 Configuration Dual SO-8 Dual D2 D1 D2 D2 5 D1 6 D1 7 8 G1 G2 4 G2 3 3 S1 S2 S2 S2 2 2 G G1 1 1 N-Channel MOSFET N-Channel M