AO4840E Datasheet and Replacement
Type Designator: AO4840E
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 6 A
tr ⓘ - Rise Time: 8 nS
Cossⓘ - Output Capacitance: 65 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.028 Ohm
Package: SO-8
AO4840E substitution
AO4840E Datasheet (PDF)
ao4840e.pdf

AO4840E40V Dual N-Channel AlphaMOSGeneral Description Product SummaryVDS Advanced trench technology 40V Low RDS(ON) ID (at VGS=10V) 6A Low Gate Charge RDS(ON) (at VGS=10V)
ao4840.pdf

AO484040V Dual N-Channel MOSFETGeneral Description Product SummaryVDS40VThe AO4840 uses advanced trench technologyMOSFETs to provide excellent RDS(ON) and low gate ID (at VGS=10V) 6Acharge. This dual device is suitable for use as a load RDS(ON) (at VGS=10V)
ao4840.pdf

SMD Type MOSFETDual N-Channel MOSFETAO4840 (KO4840)SOP-8 Unit:mm Features VDS (V) = 40V1.50 0.15 ID = 6A (VGS = 10V) RDS(ON) 30m (VGS = 10V) RDS(ON) 38m (VGS = 4.5V)1 S2 5 D1 6 D12 G27 D23 S18 D24 G1D1 D2G1 G2S1 S2 Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS 40V Gate-So
ao4840.pdf

AO4840www.VBsemi.twDual N-Channel 60 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) 60 100 % Rg and UIS testedRDS(on) () at VGS = 10 V 0.040RDS(on) () at VGS = 4.5 V 0.055ID (A) per leg 7Configuration DualSO-8 DualD2D1 D2D2 5D16D178G1 G24G233S1S2S2 S222GG111N-Channel MOSFET N-Channel M
Datasheet: AO4292E , AO4294 , AO4294A , AO4296 , AO4402G , AO4405E , AO4423-L , AO4630 , IRF9540 , AO4862E , AO6411 , AO6602G , AO6608 , AOB12N65L , AOB2140L , AOB2146L , AOB2502L .
History: PHP45NQ11T | TPCS8303 | AOLF66610 | NVR5124PL | SUB65P06-20 | 2SK879 | FQP6N60
Keywords - AO4840E MOSFET datasheet
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History: PHP45NQ11T | TPCS8303 | AOLF66610 | NVR5124PL | SUB65P06-20 | 2SK879 | FQP6N60



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