AO6411 Todos los transistores

AO6411 20V P-Channel AlphaMOS General Description Product Summary VDS Trench Power AlphaMOS ( MOS LV) technology -20V Low RDS(ON) ID (at VGS=-4.5V) -7A Low Gate Charge RDS(ON) (at VGS=-4.5V)

Freescale AO6414/ MC6414 N-Channel 60-V (D-S) MOSFET PRODUCT SUMMARY Key Features rDS(on) (m ) VDS (V) ID(A) Low r trench technology DS(on) 92 @ VGS = 10V 3.4 Low thermal impedance 60 107 @ VGS = 4.5V 3.1 Fast switching speed Typical Applications White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAX

AO6415 20V P-Channel MOSFET General Description Product Summary VDS -20V The AO6415 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate ID (at VGS=-10V) -3.3A voltages as low as 2.5V. This device is suitable for use as RDS(ON) (at VGS= -10V)

SMD Type MOSFET P-Channel MOSFET AO6415 (KO6415) ( ) SOT-23-6 Unit mm 0.4+0.1 -0.1 Features VDS (V) =-20V 6 5 4 ID =-3.3A (VGS =-10V) RDS(ON) 82m (VGS =-10V) RDS(ON) 100m (VGS =-4.5V) RDS(ON) 140m (VGS =-2.5V) 2 3 1 +0.02 0.15 -0.02 ESD Rating 2000V HBM +0.01 -0.01 +0.2 -0.1 D 1 Drain 4 Source 2 Drain 5 Drain 3 Gate