AO6411 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

AO6411 Datasheet (PDF)

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AO641120V P-Channel AlphaMOSGeneral Description Product SummaryVDS Trench Power AlphaMOS (MOS LV) technology -20V Low RDS(ON) ID (at VGS=-4.5V) -7A Low Gate Charge RDS(ON) (at VGS=-4.5V)

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FreescaleAO6414/ MC6414N-Channel 60-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)92 @ VGS = 10V3.4 Low thermal impedance 60107 @ VGS = 4.5V3.1 Fast switching speed Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAX

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AO641520V P-Channel MOSFETGeneral Description Product SummaryVDS -20VThe AO6415 uses advanced trench technology to provideexcellent RDS(ON), low gate charge and operation with gate ID (at VGS=-10V) -3.3Avoltages as low as 2.5V. This device is suitable for use as RDS(ON) (at VGS= -10V)

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SMD Type MOSFETP-Channel MOSFETAO6415 (KO6415)( )SOT-23-6 Unit: mm0.4+0.1-0.1 Features VDS (V) =-20V6 5 4 ID =-3.3A (VGS =-10V) RDS(ON) 82m (VGS =-10V) RDS(ON) 100m (VGS =-4.5V) RDS(ON) 140m (VGS =-2.5V) 2 31+0.020.15 -0.02 ESD Rating: 2000V HBM+0.01-0.01+0.2-0.1D1 Drain 4 Source2 Drain 5 Drain3 Gate

Otros transistores... AO4294A , AO4296 , AO4402G , AO4405E , AO4423-L , AO4630 , AO4840E , AO4862E , 2SK3878 , AO6602G , AO6608 , AOB12N65L , AOB2140L , AOB2146L , AOB2502L , AOB2904 , AOB2906 .