AOB2140L Todos los transistores

 

AOB2140L MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AOB2140L

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 272 W

Tensión drenaje-fuente (Vds): 40 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 195 A

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 2.3 V

Tiempo de elevación (tr): 29 nS

Conductancia de drenaje-sustrato (Cd): 1635 pF

Resistencia drenaje-fuente RDS(on): 0.0015 Ohm

Empaquetado / Estuche: TO-263

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AOB2140L Datasheet (PDF)

1.1. aob2140l.pdf Size:373K _aosemi

AOB2140L
AOB2140L

AOT2140L/AOB2140L TM 40V N-Channel AlphaSGT General Description Product Summary VDS 40V • Trench Power AlphaSGTTM technology ID (at VGS=10V) 195A • Low RDS(ON) • Low Gate Charge RDS(ON) (at VGS=10V) < 1.5mΩ • Optimized Ruggedness RDS(ON) (at VGS=4.5V) < 2mΩ • RoHS and Halogen-Free Compliant Applications 100% UIS Tested 100% Rg Tested • DC Motor Driver

4.1. aob2146l.pdf Size:372K _aosemi

AOB2140L
AOB2140L

AOT2146L/AOB2146L TM 40V N-Channel AlphaSGT General Description Product Summary VDS 40V • Trench Power AlphaSGTTM technology ID (at VGS=10V) 105A • Low RDS(ON) • Low Gate Charge RDS(ON) (at VGS=10V) < 2.8mΩ • Optimized Ruggedness RDS(ON) (at VGS=4.5V) < 3.9mΩ • RoHS and Halogen-Free Compliant Applications 100% UIS Tested 100% Rg Tested • DC Motor Driver

 5.1. aob210l.pdf Size:247K _aosemi

AOB2140L
AOB2140L

AOT210L/AOB210L 30V N-Channel MOSFET General Description Product Summary VDS The AOT210L/AOB210L uses Trench MOSFET 30V technology that is uniquely optimized to provide the most 105A ID (at VGS=10V) efficient high frequency switching performance. Power < 2.9mΩ (< 2.6mΩ∗) RDS(ON) (at VGS=10V) losses are minimized due to an extremely low combination < 3.7mΩ (< 3.5mΩ∗)

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