All MOSFET. AOB2140L Datasheet

 

AOB2140L MOSFET. Datasheet pdf. Equivalent


   Type Designator: AOB2140L
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 272 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.3 V
   |Id|ⓘ - Maximum Drain Current: 195 A
   trⓘ - Rise Time: 29 nS
   Cossⓘ - Output Capacitance: 1635 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0015 Ohm
   Package: TO-263

 AOB2140L Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

AOB2140L Datasheet (PDF)

 ..1. Size:373K  aosemi
 aob2140l.pdf

AOB2140L AOB2140L

AOT2140L/AOB2140LTM40V N-Channel AlphaSGTGeneral Description Product SummaryVDS40V Trench Power AlphaSGTTM technology ID (at VGS=10V) 195A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V)

 ..2. Size:227K  inchange semiconductor
 aob2140l.pdf

AOB2140L AOB2140L

isc N-Channel MOSFET Transistor AOB2140LDESCRIPTIONDrain Current I = 195A@ T =25D CDrain Source Voltage: V =40V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONS .Designed for high current, high speed switching, switchmode power supplies (SMPS).ABSOLUTE MAXIMUM RATINGS(T =25)C

 8.1. Size:320K  1
 aot2144l aob2144l.pdf

AOB2140L AOB2140L

AOT2144L/AOB2144L40V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MV MOSFET technology 40V Low RDS(ON) ID (at VGS=10V) 120 A Low Gate Charge RDS(ON) (at VGS=10V)

 8.2. Size:372K  aosemi
 aob2146l.pdf

AOB2140L AOB2140L

AOT2146L/AOB2146LTM40V N-Channel AlphaSGTGeneral Description Product SummaryVDS40V Trench Power AlphaSGTTM technology ID (at VGS=10V) 105A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V)

 8.3. Size:384K  aosemi
 aob2144l.pdf

AOB2140L AOB2140L

AOT2144L/AOB2144L40V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MV MOSFET technology 40V Low RDS(ON) ID (at VGS=10V) 120 A Low Gate Charge RDS(ON) (at VGS=10V)

 8.4. Size:253K  inchange semiconductor
 aob2146l.pdf

AOB2140L AOB2140L

isc N-Channel MOSFET Transistor AOB2146LFEATURESDrain Current I = 105A@ T =25D CDrain Source Voltage-: V = 40V(Min)DSSStatic Drain-Source On-Resistance: R = 2.8m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp

 8.5. Size:253K  inchange semiconductor
 aob2144l.pdf

AOB2140L AOB2140L

isc N-Channel MOSFET Transistor AOB2144LFEATURESDrain Current I = 120A@ T =25D CDrain Source Voltage-: V = 40V(Min)DSSStatic Drain-Source On-Resistance: R = 2.3m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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