AOB9N70L MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AOB9N70L
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 236 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 700 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 9 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 375 nS
Cossⓘ - Capacitancia de salida: 113 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1.2 Ohm
Paquete / Cubierta: TO-263
Búsqueda de reemplazo de AOB9N70L MOSFET
AOB9N70L Datasheet (PDF)
aob9n70l.pdf

AOT9N70/AOTF9N70/AOB9N70700V, 9A N-Channel MOSFETGeneral Description Product Summary VDS800V@150The AOT9N70 & AOTF9N70 & AOB9N70 have beenfabricated using an advanced high voltage MOSFET ID (at VGS=10V) 9Aprocess that is designed to deliver high levels of RDS(ON) (at VGS=10V)
aob9n70l.pdf

isc N-Channel MOSFET Transistor AOB9N70LFEATURESDrain Current I =9A@ T =25D CDrain Source Voltage-: V =700V(Min)DSSStatic Drain-Source On-Resistance: R = 1.2(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose
aot9n70 aotf9n70 aob9n70.pdf

AOT9N70/AOTF9N70/AOB9N70700V, 9A N-Channel MOSFETGeneral Description Product Summary VDS800V@150The AOT9N70 & AOTF9N70 & AOB9N70 have beenfabricated using an advanced high voltage MOSFET ID (at VGS=10V) 9Aprocess that is designed to deliver high levels of RDS(ON) (at VGS=10V)
aob9n70.pdf

isc N-Channel MOSFET Transistor AOB9N70FEATURESDrain Current I =9A@ T =25D CDrain Source Voltage-: V =700V(Min)DSSStatic Drain-Source On-Resistance: R = 1.2(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose a
Otros transistores... AO6602G , AO6608 , AOB12N65L , AOB2140L , AOB2146L , AOB2502L , AOB2904 , AOB2906 , IRF1010E , AOC2804B , AOC2870 , AOC2874 , AOC3860 , AOC3862 , AOC3864 , AOC3868 , AOC3870 .
History: VBFB16R04 | HTD2K1P10 | 2SK4212-ZK | FKP253 | PTF8N65 | BRCS120N03DP | PZ5203QV
History: VBFB16R04 | HTD2K1P10 | 2SK4212-ZK | FKP253 | PTF8N65 | BRCS120N03DP | PZ5203QV



Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: JBE084M | JBE083NS | JBE083M | JMH70R430AK | JMH70R430AF | JMH65R980APLN | JMH65R980AKQ | JMH65R980AK | JMH65R980AF | JMH65R980ACFP | JMH65R640AK | JMH65R600MK | JMH65R600MF | JMPL1025AK | JMPL1025AE | JMPL0648PKQ
Popular searches
irf5210 | mj15024 | 2n2219 | tip42c | 2sc2240 | bc547 transistor equivalent | 2sa1943 | tip41c datasheet