AOB9N70L Todos los transistores

 

AOB9N70L MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AOB9N70L
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 236 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 700 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 9 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 375 nS
   Cossⓘ - Capacitancia de salida: 113 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1.2 Ohm
   Paquete / Cubierta: TO-263
     - Selección de transistores por parámetros

 

AOB9N70L Datasheet (PDF)

 ..1. Size:403K  aosemi
 aob9n70l.pdf pdf_icon

AOB9N70L

AOT9N70/AOTF9N70/AOB9N70700V, 9A N-Channel MOSFETGeneral Description Product Summary VDS800V@150The AOT9N70 & AOTF9N70 & AOB9N70 have beenfabricated using an advanced high voltage MOSFET ID (at VGS=10V) 9Aprocess that is designed to deliver high levels of RDS(ON) (at VGS=10V)

 ..2. Size:255K  inchange semiconductor
 aob9n70l.pdf pdf_icon

AOB9N70L

isc N-Channel MOSFET Transistor AOB9N70LFEATURESDrain Current I =9A@ T =25D CDrain Source Voltage-: V =700V(Min)DSSStatic Drain-Source On-Resistance: R = 1.2(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose

 7.1. Size:403K  1
 aot9n70 aotf9n70 aob9n70.pdf pdf_icon

AOB9N70L

AOT9N70/AOTF9N70/AOB9N70700V, 9A N-Channel MOSFETGeneral Description Product Summary VDS800V@150The AOT9N70 & AOTF9N70 & AOB9N70 have beenfabricated using an advanced high voltage MOSFET ID (at VGS=10V) 9Aprocess that is designed to deliver high levels of RDS(ON) (at VGS=10V)

 7.2. Size:255K  inchange semiconductor
 aob9n70.pdf pdf_icon

AOB9N70L

isc N-Channel MOSFET Transistor AOB9N70FEATURESDrain Current I =9A@ T =25D CDrain Source Voltage-: V =700V(Min)DSSStatic Drain-Source On-Resistance: R = 1.2(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose a

MOSTRAR MÁS

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: IRLR3715 | FMC20N50E

 

 
Back to Top

 


 
.