AOC3862 Todos los transistores

 

AOC3862 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AOC3862

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 2.5 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 12 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 8 V

|Id|ⓘ - Corriente continua de drenaje: 27 A

CARACTERÍSTICAS ELÉCTRICAS

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.003 Ohm

Encapsulados: ALPHADFN3.55X1.77

 Búsqueda de reemplazo de AOC3862 MOSFET

- Selecciónⓘ de transistores por parámetros

 

AOC3862 datasheet

 ..1. Size:324K  aosemi
aoc3862.pdf pdf_icon

AOC3862

AOC3862 12V Common-Drain Dual N-Channel MOSFET General Description Product Summary VSS Trench Power MOSFET technology 12V Low RSS(ON) With ESD protection to improve battery performance and safety RSS(ON) (at VGS=4.5V)

 8.1. Size:699K  aosemi
aoc3860a.pdf pdf_icon

AOC3862

AOC3860A 12V Common-Drain Dual N-Channel MOSFET General Description Product Summary VSS Trench Power MOSFET technology 12V Low RSS(ON) With ESD protection to improve battery performance and RSS(ON) (at VGS=4.5V)

 8.2. Size:469K  aosemi
aoc3864.pdf pdf_icon

AOC3862

AOC3864 20V Common-Drain Dual N-Channel AlphaMOS General Description Product Summary VSS Trench Power AlphaMOS ( MOS LV) technology 20V Low RSS(ON) Fully protected AlphaDFN package RSS(ON) (at VGS=4.5V)

 8.3. Size:766K  aosemi
aoc3860c.pdf pdf_icon

AOC3862

AOC3860C 12V Common-Drain Dual N-Channel MOSFET General Description Product Summary VSS Trench Power MOSFET technology 12V Ultra low RSS(ON) With ESD protection to improve battery performance and safety RSS(ON) (at VGS=4.5V)

Otros transistores... AOB2502L , AOB2904 , AOB2906 , AOB9N70L , AOC2804B , AOC2870 , AOC2874 , AOC3860 , IRFP260 , AOC3864 , AOC3868 , AOC3870 , AOD409G , AOD424G , AOD442G , AOD522P , AOD558 .

History: 2SK3355-Z | STD3PK50Z | AO4292E | 30N06G-TF3-T | NCE3080KA | AGM405AP1 | 2SK3575-S

 

 

 

 

↑ Back to Top
.