All MOSFET. AOC3862 Datasheet

 

AOC3862 Datasheet and Replacement


   Type Designator: AOC3862
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 12 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id| ⓘ - Maximum Drain Current: 27 A
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.003 Ohm
   Package: ALPHADFN3.55X1.77
 

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AOC3862 Datasheet (PDF)

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AOC3862

AOC386212V Common-Drain Dual N-Channel MOSFETGeneral Description Product SummaryVSS Trench Power MOSFET technology 12V Low RSS(ON) With ESD protection to improve battery performance and safety RSS(ON) (at VGS=4.5V)

 8.1. Size:699K  aosemi
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AOC3862

AOC3860A12V Common-Drain Dual N-Channel MOSFETGeneral Description Product SummaryVSS Trench Power MOSFET technology 12V Low RSS(ON) With ESD protection to improve battery performance and RSS(ON) (at VGS=4.5V)

 8.2. Size:469K  aosemi
aoc3864.pdf pdf_icon

AOC3862

AOC386420V Common-Drain Dual N-Channel AlphaMOSGeneral Description Product SummaryVSS Trench Power AlphaMOS (MOS LV) technology 20V Low RSS(ON) Fully protected AlphaDFN package RSS(ON) (at VGS=4.5V)

 8.3. Size:766K  aosemi
aoc3860c.pdf pdf_icon

AOC3862

AOC3860C12V Common-Drain Dual N-Channel MOSFETGeneral Description Product SummaryVSS Trench Power MOSFET technology 12V Ultra low RSS(ON) With ESD protection to improve battery performance and safety RSS(ON) (at VGS=4.5V)

Datasheet: AOB2502L , AOB2904 , AOB2906 , AOB9N70L , AOC2804B , AOC2870 , AOC2874 , AOC3860 , 8205A , AOC3864 , AOC3868 , AOC3870 , AOD409G , AOD424G , AOD442G , AOD522P , AOD558 .

History: VBZA5670 | 2SK1015-01 | APT29F100L | YJG90G10A | CS6N70F | BUK9K18-40E | STN3414

Keywords - AOC3862 MOSFET datasheet

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