AOC3862 Datasheet and Replacement
Type Designator: AOC3862
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 2.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 12 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Id|ⓘ - Maximum Drain Current: 27 A
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.003 Ohm
Package: ALPHADFN3.55X1.77
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AOC3862 Datasheet (PDF)
aoc3862.pdf

AOC386212V Common-Drain Dual N-Channel MOSFETGeneral Description Product SummaryVSS Trench Power MOSFET technology 12V Low RSS(ON) With ESD protection to improve battery performance and safety RSS(ON) (at VGS=4.5V)
aoc3860a.pdf

AOC3860A12V Common-Drain Dual N-Channel MOSFETGeneral Description Product SummaryVSS Trench Power MOSFET technology 12V Low RSS(ON) With ESD protection to improve battery performance and RSS(ON) (at VGS=4.5V)
aoc3864.pdf

AOC386420V Common-Drain Dual N-Channel AlphaMOSGeneral Description Product SummaryVSS Trench Power AlphaMOS (MOS LV) technology 20V Low RSS(ON) Fully protected AlphaDFN package RSS(ON) (at VGS=4.5V)
aoc3860c.pdf

AOC3860C12V Common-Drain Dual N-Channel MOSFETGeneral Description Product SummaryVSS Trench Power MOSFET technology 12V Ultra low RSS(ON) With ESD protection to improve battery performance and safety RSS(ON) (at VGS=4.5V)
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: AP6679GI-HF | DM12N65C | SPD04N60S5 | NTD4855N-1G | FCPF7N60YDTU | SM6A12NSFP
Keywords - AOC3862 MOSFET datasheet
AOC3862 cross reference
AOC3862 equivalent finder
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History: AP6679GI-HF | DM12N65C | SPD04N60S5 | NTD4855N-1G | FCPF7N60YDTU | SM6A12NSFP



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