AOC3864 Todos los transistores

 

AOC3864 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AOC3864

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 2.4 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 20 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 8 V

|Id|ⓘ - Corriente continua de drenaje: 19 A

CARACTERÍSTICAS ELÉCTRICAS

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0057 Ohm

Encapsulados: ALPHADFN2.7X1.8

 Búsqueda de reemplazo de AOC3864 MOSFET

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AOC3864 datasheet

 ..1. Size:469K  aosemi
 aoc3864.pdf pdf_icon

AOC3864

AOC3864 20V Common-Drain Dual N-Channel AlphaMOS General Description Product Summary VSS Trench Power AlphaMOS ( MOS LV) technology 20V Low RSS(ON) Fully protected AlphaDFN package RSS(ON) (at VGS=4.5V)

 8.1. Size:699K  aosemi
 aoc3860a.pdf pdf_icon

AOC3864

AOC3860A 12V Common-Drain Dual N-Channel MOSFET General Description Product Summary VSS Trench Power MOSFET technology 12V Low RSS(ON) With ESD protection to improve battery performance and RSS(ON) (at VGS=4.5V)

 8.2. Size:324K  aosemi
 aoc3862.pdf pdf_icon

AOC3864

AOC3862 12V Common-Drain Dual N-Channel MOSFET General Description Product Summary VSS Trench Power MOSFET technology 12V Low RSS(ON) With ESD protection to improve battery performance and safety RSS(ON) (at VGS=4.5V)

 8.3. Size:766K  aosemi
 aoc3860c.pdf pdf_icon

AOC3864

AOC3860C 12V Common-Drain Dual N-Channel MOSFET General Description Product Summary VSS Trench Power MOSFET technology 12V Ultra low RSS(ON) With ESD protection to improve battery performance and safety RSS(ON) (at VGS=4.5V)

MOSTRAR MÁS

Otros transistores... AOB2904 , AOB2906 , AOB9N70L , AOC2804B , AOC2870 , AOC2874 , AOC3860 , AOC3862 , 4435 , AOC3868 , AOC3870 , AOD409G , AOD424G , AOD442G , AOD522P , AOD558 , AOD607A .

History: AO4423-L | JCS12N65FT | SI1023X | 2SK3575-Z | AO4607 | IRF7331

 

 

 

 

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