All MOSFET. AOC3864 Datasheet

 

AOC3864 Datasheet and Replacement


   Type Designator: AOC3864
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.4 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id| ⓘ - Maximum Drain Current: 19 A
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0057 Ohm
   Package: ALPHADFN2.7X1.8
 

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AOC3864 Datasheet (PDF)

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AOC3864

AOC386420V Common-Drain Dual N-Channel AlphaMOSGeneral Description Product SummaryVSS Trench Power AlphaMOS (MOS LV) technology 20V Low RSS(ON) Fully protected AlphaDFN package RSS(ON) (at VGS=4.5V)

 8.1. Size:699K  aosemi
 aoc3860a.pdf pdf_icon

AOC3864

AOC3860A12V Common-Drain Dual N-Channel MOSFETGeneral Description Product SummaryVSS Trench Power MOSFET technology 12V Low RSS(ON) With ESD protection to improve battery performance and RSS(ON) (at VGS=4.5V)

 8.2. Size:324K  aosemi
 aoc3862.pdf pdf_icon

AOC3864

AOC386212V Common-Drain Dual N-Channel MOSFETGeneral Description Product SummaryVSS Trench Power MOSFET technology 12V Low RSS(ON) With ESD protection to improve battery performance and safety RSS(ON) (at VGS=4.5V)

 8.3. Size:766K  aosemi
 aoc3860c.pdf pdf_icon

AOC3864

AOC3860C12V Common-Drain Dual N-Channel MOSFETGeneral Description Product SummaryVSS Trench Power MOSFET technology 12V Ultra low RSS(ON) With ESD protection to improve battery performance and safety RSS(ON) (at VGS=4.5V)

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Datasheet: AOB2904 , AOB2906 , AOB9N70L , AOC2804B , AOC2870 , AOC2874 , AOC3860 , AOC3862 , 2SK3568 , AOC3868 , AOC3870 , AOD409G , AOD424G , AOD442G , AOD522P , AOD558 , AOD607A .

History: NTHS5445T1 | APT4080BN | 25N10G-TM3-T

Keywords - AOC3864 MOSFET datasheet

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