AOD409G Todos los transistores

 ..1. Size:317K  aosemi
 aod409g.pdf

AOD409G 60V P-Channel MOSFET General Description Product Summary VDS Trench Power MOSFET technology -60V Low RDS(ON) ID (at VGS=-10V) -28A Logic Level Driving RDS(ON) (at VGS=-10V)

 ..2. Size:249K  inchange semiconductor
 aod409g.pdf

isc P-Channel MOSFET Transistor AOD409G FEATURES Drain Current I = -28A@ T =25 D C Drain Source Voltage- V = -60V(Min) DSS Static Drain-Source On-Resistance R = 40m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Be suitable for synchronous rectification for server and gene

 8.1. Size:383K  aosemi
 aod409.pdf

AOD409/AOI409 60V P-Channel MOSFET General Description Product Summary VDS Trench Power MV MOSFET technology -60V Low RDS(ON) ID (at VGS=-10V) -26A Low Gate Charge RDS(ON) (at VGS=-10V)

 8.2. Size:237K  aosemi
 aod409 aoi409.pdf

AOD409/AOI409 P-Channel Enhancement Mode Field Effect Transistor General Description Features The AOD/I409 uses advanced trench technology to VDS (V) = -60V provide excellent RDS(ON), low gate charge and low ID = -26A (VGS = -10V) gate resistance. With the excellent thermal resistance RDS(ON)

 8.3. Size:207K  inchange semiconductor
 aod409.pdf

INCHANGE Semiconductor isc P-Channel MOSFET Transistor AOD409 FEATURES With TO-252( DPAK ) packaging High speed switching Low gate input resistance Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RA