AOD409G Todos los transistores

 

AOD409G MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AOD409G
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 60 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 28 A

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 23 nS
   Cossⓘ - Capacitancia de salida: 160 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.04 Ohm
   Paquete / Cubierta: TO-252

 Búsqueda de reemplazo de MOSFET AOD409G

 

AOD409G Datasheet (PDF)

 ..1. Size:317K  aosemi
aod409g.pdf

AOD409G
AOD409G

AOD409G60V P-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MOSFET technology -60V Low RDS(ON) ID (at VGS=-10V) -28A Logic Level Driving RDS(ON) (at VGS=-10V)

 ..2. Size:249K  inchange semiconductor
aod409g.pdf

AOD409G
AOD409G

isc P-Channel MOSFET Transistor AOD409GFEATURESDrain Current I = -28A@ T =25D CDrain Source Voltage-: V = -60V(Min)DSSStatic Drain-Source On-Resistance: R = 40m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONBe suitable for synchronous rectification for server andgene

 8.1. Size:383K  aosemi
aod409.pdf

AOD409G
AOD409G

AOD409/AOI40960V P-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MV MOSFET technology -60V Low RDS(ON) ID (at VGS=-10V) -26A Low Gate Charge RDS(ON) (at VGS=-10V)

 8.2. Size:237K  aosemi
aod409 aoi409.pdf

AOD409G
AOD409G

AOD409/AOI409P-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AOD/I409 uses advanced trench technology to VDS (V) = -60Vprovide excellent RDS(ON), low gate charge and low ID = -26A (VGS = -10V)gate resistance. With the excellent thermal resistance RDS(ON)

 8.3. Size:207K  inchange semiconductor
aod409.pdf

AOD409G
AOD409G

INCHANGE Semiconductorisc P-Channel MOSFET Transistor AOD409FEATURESWith TO-252( DPAK ) packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RA

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
Back to Top

 


AOD409G
  AOD409G
  AOD409G
 

social 

Liste

Recientemente añadidas las descripciónes de los transistores:

MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918

 

 

 
Back to Top