AOD442G Todos los transistores

 ..1. Size:349K  aosemi
 aod442g.pdf

AOD442G 60V N-Channel MOSFET General Description Product Summary VDS Trench Power MV MOSFET technology 60V Low RDS(ON) ID (at VGS=10V) 40A Logic Level Driving RDS(ON) (at VGS=10V)

 ..2. Size:249K  inchange semiconductor
 aod442g.pdf

isc N-Channel MOSFET Transistor AOD442G FEATURES Drain Current I = 40A@ T =25 D C Drain Source Voltage- V = 60V(Min) DSS Static Drain-Source On-Resistance R = 18m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Be suitable for synchronous rectification for server and genera

 8.1. Size:246K  aosemi
 aod442 aoi442.pdf

AOD442/AOI442 60V N-Channel MOSFET General Description Product Summary VDS The AOD442/AOI442 used advanced trench technology to 60V 37A provide excellent RDS(ON) and low gate charge. Those ID (at VGS=10V) devices are suitable for use as a load switch or in PWM

 8.2. Size:246K  aosemi
 aod442.pdf

AOD442/AOI442 60V N-Channel MOSFET General Description Product Summary VDS The AOD442/AOI442 used advanced trench technology to 60V 37A provide excellent RDS(ON) and low gate charge. Those ID (at VGS=10V) devices are suitable for use as a load switch or in PWM

 8.3. Size:249K  inchange semiconductor
 aod442.pdf

isc N-Channel MOSFET Transistor AOD442 FEATURES Drain Current I = 37A@ T =25 D C Drain Source Voltage- V = 60V(Min) DSS Static Drain-Source On-Resistance R = 20m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Be suitable for synchronous rectification for server and general