AON3820 Todos los transistores

 

AON3820 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AON3820
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 24 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
   |Id|ⓘ - Corriente continua de drenaje: 8 A

CARACTERÍSTICAS ELÉCTRICAS


   Cossⓘ - Capacitancia de salida: 250 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0089 Ohm
   Paquete / Cubierta: DFN3X3
 

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AON3820 datasheet

 ..1. Size:330K  aosemi
 aon3820.pdf pdf_icon

AON3820

AON3820 24V Dual N-Channel AlphaMOS General Description Product Summary VDS Trench Power AlphaMOS ( MOS LV) technology 24V Low RDS(ON) ID (at VGS=4.5V) 8A Low Gate Charge RDS(ON) (at VGS=4.5V)

 9.1. Size:263K  1
 aon3814.pdf pdf_icon

AON3820

 9.2. Size:232K  aosemi
 aon3806.pdf pdf_icon

AON3820

AON3806 20V Dual N-Channel MOSFET General Description Product Summary VDS The AON3806 uses advanced trench technology to 20V provide excellent RDS(ON), low gate charge and ID (at VGS=4.5V) 6A operation with gate voltages as low as 2.5V while RDS(ON) (at VGS=4.5V)

 9.3. Size:264K  aosemi
 aon3816.pdf pdf_icon

AON3820

AON3816 20V Dual N-Channel MOSFET General Description Product Summary VDS 20V The AON3816 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation ID (at VGS=4.5V) 4A with gate voltages as low as 1.8V while retaining a 12V RDS(ON) (at VGS = 4.5V)

MOSTRAR MÁS

Otros transistores... AOI2610E , AOI2614 , AOI66406 , AOK60N30L , AOL1404G , AOL1454G , AON2392 , AON3414 , IRFZ24N , AON5802BG , AON5816 , AON6144 , AON6152 , AON6154 , AON6156 , AON6160 , AON6162 .

 

 

 


 
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