AON3820 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AON3820
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pd): 2 W
Tensión drenaje-fuente (Vds): 24 V
Tensión compuerta-fuente (Vgs): 12 V
Corriente continua de drenaje (Id): 8 A
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral compuerta-fuente Vgs(th): 1.3 V
Conductancia de drenaje-sustrato (Cd): 250 pF
Resistencia drenaje-fuente RDS(on): 0.0089 Ohm
Empaquetado / Estuche: DFN3x3
Búsqueda de reemplazo de MOSFET AON3820
AON3820 Datasheet (PDF)
1.1. aon3820.pdf 
Size:330K _aosemi
AON3820 24V Dual N-Channel AlphaMOS General Description Product Summary VDS • Trench Power AlphaMOS (αMOS LV) technology 24V • Low RDS(ON) ID (at VGS=4.5V) 8A • Low Gate Charge RDS(ON) (at VGS=4.5V) < 8.9mΩ • ESD protection RDS(ON) (at VGS=4.0V) < 9.5mΩ • RoHS and Halogen-Free Compliant RDS(ON) (at VGS=3.7V) < 9.6mΩ RDS(ON) (at VGS=3.1V) < 10mΩ RDS(ON
5.1. aon3816.pdf Size:264K _aosemi
AON3816 20V Dual N-Channel MOSFET General Description Product Summary VDS 20V The AON3816 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation ID (at VGS=4.5V) 4A with gate voltages as low as 1.8V while retaining a 12V RDS(ON) (at VGS = 4.5V) < 22mΩ VGS(MAX) rating. It is ESD protected. This device is suitable RDS(ON) (at VGS = 4V) < 23mΩ
5.2. aon3818.pdf Size:345K _aosemi
AON3818 24V Dual N-Channel AlphaMOS General Description Product Summary VDS • Trench Power AlphaMOS (αMOS LV) technology 24V • Low RDS(ON) ID (at VGS=4.5V) 8A • Low Gate Charge RDS(ON) (at VGS=4.5V) < 13.5mΩ • ESD protection RDS(ON) (at VGS=4.0V) < 14mΩ • RoHS and Halogen-Free Compliant RDS(ON) (at VGS=3.7V) < 15mΩ RDS(ON) (at VGS=3.1V) < 17mΩ RDS(ON) (at
5.3. aon3806.pdf Size:232K _aosemi
AON3806 20V Dual N-Channel MOSFET General Description Product Summary VDS The AON3806 uses advanced trench technology to 20V provide excellent RDS(ON), low gate charge and ID (at VGS=4.5V) 6A operation with gate voltages as low as 2.5V while RDS(ON) (at VGS=4.5V) < 22mΩ retaining a 12V VGS(MAX) rating. It is ESD protected. RDS(ON) (at VGS =4.0V) < 24mΩ This device is suitable
5.4. aon3814.pdf Size:263K _aosemi
AON3814 20V Dual N-Channel MOSFET General Description Product Summary VDS 20V The AON3814 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation ID (at VGS=4.5V) 6A with gate voltages as low as 1.8V while retaining a 12V RDS(ON) (at VGS = 4.5V) < 17mΩ VGS(MAX) rating. It is ESD protected. This device is suitable RDS(ON) (at VGS = 4V) < 18.5m
Otros transistores... CED6861 , CED95P04 , CEF14P20 , CEF15P15 , CEF6601 , CEH2305 , CEH2313 , CEH2321 , 2SK170 , CEH2331 , CEH3456 , CEM2163 , CEM2187 , CEM2281 , CEM2401 , CEM2407 , CEM3053 .
