AON3820 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AON3820
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 2 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 24 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
|Id|ⓘ - Corriente continua de drenaje: 8 A
CARACTERÍSTICAS ELÉCTRICAS
Cossⓘ - Capacitancia de salida: 250 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0089 Ohm
Paquete / Cubierta: DFN3X3
Búsqueda de reemplazo de AON3820 MOSFET
AON3820 PDF Specs
aon3820.pdf
AON3820 24V Dual N-Channel AlphaMOS General Description Product Summary VDS Trench Power AlphaMOS ( MOS LV) technology 24V Low RDS(ON) ID (at VGS=4.5V) 8A Low Gate Charge RDS(ON) (at VGS=4.5V) ... See More ⇒
aon3806.pdf
AON3806 20V Dual N-Channel MOSFET General Description Product Summary VDS The AON3806 uses advanced trench technology to 20V provide excellent RDS(ON), low gate charge and ID (at VGS=4.5V) 6A operation with gate voltages as low as 2.5V while RDS(ON) (at VGS=4.5V) ... See More ⇒
aon3816.pdf
AON3816 20V Dual N-Channel MOSFET General Description Product Summary VDS 20V The AON3816 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation ID (at VGS=4.5V) 4A with gate voltages as low as 1.8V while retaining a 12V RDS(ON) (at VGS = 4.5V) ... See More ⇒
Otros transistores... AOI2610E , AOI2614 , AOI66406 , AOK60N30L , AOL1404G , AOL1454G , AON2392 , AON3414 , IRFZ24N , AON5802BG , AON5816 , AON6144 , AON6152 , AON6154 , AON6156 , AON6160 , AON6162 .
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Recientemente añadidas las descripciónes de los transistores:
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