AON3820 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AON3820  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 2 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 24 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 12 V

|Id|ⓘ - Corriente continua de drenaje: 8 A

CARACTERÍSTICAS ELÉCTRICAS

Cossⓘ - Capacitancia de salida: 250 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0089 Ohm

Encapsulados: DFN3X3

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AON3820 datasheet

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AON3820

AON3820 24V Dual N-Channel AlphaMOS General Description Product Summary VDS Trench Power AlphaMOS ( MOS LV) technology 24V Low RDS(ON) ID (at VGS=4.5V) 8A Low Gate Charge RDS(ON) (at VGS=4.5V)

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 aon3814.pdf pdf_icon

AON3820

 9.2. Size:232K  aosemi
 aon3806.pdf pdf_icon

AON3820

AON3806 20V Dual N-Channel MOSFET General Description Product Summary VDS The AON3806 uses advanced trench technology to 20V provide excellent RDS(ON), low gate charge and ID (at VGS=4.5V) 6A operation with gate voltages as low as 2.5V while RDS(ON) (at VGS=4.5V)

 9.3. Size:264K  aosemi
 aon3816.pdf pdf_icon

AON3820

AON3816 20V Dual N-Channel MOSFET General Description Product Summary VDS 20V The AON3816 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation ID (at VGS=4.5V) 4A with gate voltages as low as 1.8V while retaining a 12V RDS(ON) (at VGS = 4.5V)

MOSTRAR MÁS

Otros transistores... AOI2610E, AOI2614, AOI66406, AOK60N30L, AOL1404G, AOL1454G, AON2392, AON3414, IRF530, AON5802BG, AON5816, AON6144, AON6152, AON6154, AON6156, AON6160, AON6162