AON3820 Datasheet. Specs and Replacement

Type Designator: AON3820

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 24 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 8 A

Electrical Characteristics

Cossⓘ - Output Capacitance: 250 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0089 Ohm

Package: DFN3X3

AON3820 substitution

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AON3820 datasheet

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AON3820

AON3820 24V Dual N-Channel AlphaMOS General Description Product Summary VDS Trench Power AlphaMOS ( MOS LV) technology 24V Low RDS(ON) ID (at VGS=4.5V) 8A Low Gate Charge RDS(ON) (at VGS=4.5V) ... See More ⇒

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AON3820

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AON3820

AON3806 20V Dual N-Channel MOSFET General Description Product Summary VDS The AON3806 uses advanced trench technology to 20V provide excellent RDS(ON), low gate charge and ID (at VGS=4.5V) 6A operation with gate voltages as low as 2.5V while RDS(ON) (at VGS=4.5V) ... See More ⇒

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AON3820

AON3816 20V Dual N-Channel MOSFET General Description Product Summary VDS 20V The AON3816 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation ID (at VGS=4.5V) 4A with gate voltages as low as 1.8V while retaining a 12V RDS(ON) (at VGS = 4.5V) ... See More ⇒

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Detailed specifications: AOI2610E, AOI2614, AOI66406, AOK60N30L, AOL1404G, AOL1454G, AON2392, AON3414, IRFZ24N, AON5802BG, AON5816, AON6144, AON6152, AON6154, AON6156, AON6160, AON6162

Keywords - AON3820 MOSFET specs

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