All MOSFET. AON3820 Datasheet

 

AON3820 MOSFET. Datasheet pdf. Equivalent


   Type Designator: AON3820
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 24 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.3 V
   |Id|ⓘ - Maximum Drain Current: 8 A
   Qgⓘ - Total Gate Charge: 12.5 nC
   Cossⓘ - Output Capacitance: 250 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0089 Ohm
   Package: DFN3X3

 AON3820 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

AON3820 Datasheet (PDF)

 ..1. Size:330K  aosemi
 aon3820.pdf

AON3820 AON3820

AON382024V Dual N-Channel AlphaMOSGeneral Description Product SummaryVDS Trench Power AlphaMOS (MOS LV) technology 24V Low RDS(ON) ID (at VGS=4.5V) 8A Low Gate Charge RDS(ON) (at VGS=4.5V)

 9.1. Size:263K  1
 aon3814.pdf

AON3820 AON3820

AON381420V Dual N-Channel MOSFETGeneral Description Product SummaryVDS20VThe AON3814 uses advanced trench technology toprovide excellent RDS(ON), low gate charge and operation ID (at VGS=4.5V) 6Awith gate voltages as low as 1.8V while retaining a 12V RDS(ON) (at VGS = 4.5V)

 9.2. Size:232K  aosemi
 aon3806.pdf

AON3820 AON3820

AON380620V Dual N-Channel MOSFETGeneral Description Product SummaryVDSThe AON3806 uses advanced trench technology to 20Vprovide excellent RDS(ON), low gate charge and ID (at VGS=4.5V) 6Aoperation with gate voltages as low as 2.5V while RDS(ON) (at VGS=4.5V)

 9.3. Size:264K  aosemi
 aon3816.pdf

AON3820 AON3820

AON381620V Dual N-Channel MOSFETGeneral Description Product SummaryVDS20VThe AON3816 uses advanced trench technology toprovide excellent RDS(ON), low gate charge and operation ID (at VGS=4.5V) 4Awith gate voltages as low as 1.8V while retaining a 12V RDS(ON) (at VGS = 4.5V)

 9.4. Size:345K  aosemi
 aon3818.pdf

AON3820 AON3820

AON381824V Dual N-Channel AlphaMOSGeneral Description Product SummaryVDS Trench Power AlphaMOS (MOS LV) technology 24V Low RDS(ON) ID (at VGS=4.5V) 8A Low Gate Charge RDS(ON) (at VGS=4.5V)

 9.5. Size:263K  aosemi
 aon3814.pdf

AON3820 AON3820

AON381420V Dual N-Channel MOSFETGeneral Description Product SummaryVDS20VThe AON3814 uses advanced trench technology toprovide excellent RDS(ON), low gate charge and operation ID (at VGS=4.5V) 6Awith gate voltages as low as 1.8V while retaining a 12V RDS(ON) (at VGS = 4.5V)

Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

 

 
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