IRFD320 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRFD320
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 1 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 400 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 0.49 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 14 nS
Cossⓘ - Capacitancia de salida: 120 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1.8 Ohm
Paquete / Cubierta: HD-1
Búsqueda de reemplazo de IRFD320 MOSFET
IRFD320 datasheet
irfd320pbf.pdf
PD- 95930 IRFD320PbF Lead-Free 10/28/04 Document Number 91134 www.vishay.com 1 IRFD320PbF Document Number 91134 www.vishay.com 2 IRFD320PbF Document Number 91134 www.vishay.com 3 IRFD320PbF Document Number 91134 www.vishay.com 4 IRFD320PbF Document Number 91134 www.vishay.com 5 IRFD320PbF Document Number 91134 www.vishay.com 6 IRFD320PbF Document Number 91
irfd320.pdf
PD -9.1226 IRFD320 HEXFET Power MOSFET Dynamic dv/dt Rating Repetitive Avalanche Rated VDSS = 400V For Automatic Insertion End Stackable RDS(on) = 1.8 Fast Switching Ease of paralleling Simple Drive Requirements ID = 0.49A Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device desi
irfd320pbf sihfd320.pdf
IRFD320, SiHFD320 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 400 Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 1.8 RoHS For Automatic Insertion COMPLIANT Qg (Max.) (nC) 20 End Stackable Qgs (nC) 3.3 Fast Switching Qgd (nC) 11 Ease of Paralleling Configuration Single Simple Drive Requirements D C
irfd320 sihfd320.pdf
IRFD320, SiHFD320 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 400 Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 1.8 RoHS For Automatic Insertion COMPLIANT Qg (Max.) (nC) 20 End Stackable Qgs (nC) 3.3 Fast Switching Qgd (nC) 11 Ease of Paralleling Configuration Single Simple Drive Requirements D C
Otros transistores... IRFD024 , IRFD110 , IRFD120 , IRFD210 , IRFD214 , IRFD220 , IRFD224 , IRFD310 , AO4468 , IRFD420 , IRFD9014 , IRFD9024 , IRFD9110 , IRFD9120 , IRFD9210 , IRFD9220 , IRFDC20 .
🌐 : EN ES РУ
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: HAF1008S | HAF1008L | EMZB08P03H | CS30N20FA9R | AOT66613L | AOSP21313C | AOSP21311C | AOB66918L | AO3415C | AOTF20N40L | AOTF11N60L | AOT11N60L | AONS21303C | AOI280A60 | AOB66914L | AO3485C
Popular searches
mpsa65 | 2sa794 | 2sa816 | 2sc897 datasheet | 2sd389 | mp41 transistor | nkt275 datasheet | 2sd947
