AON6268 Todos los transistores

 

AON6268 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AON6268

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 56 W

Tensión drenaje-fuente (Vds): 60 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 44 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 2.3 V

Tiempo de elevación (tr): 22 nS

Conductancia de drenaje-sustrato (Cd): 670 pF

Resistencia drenaje-fuente RDS(on): 0.0047 Ohm

Empaquetado / Estuche: DFN5x6

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AON6268 Datasheet (PDF)

1.1. aon6268.pdf Size:331K _aosemi

AON6268
AON6268

AON6268 TM 60V N-Channel AlphaSGT General Description Product Summary VDS 60V • Trench Power AlphaSGTTM technology ID (at VGS=10V) 44A • Low RDS(ON) • Low Gate Charge RDS(ON) (at VGS=10V) < 4.7mΩ RDS(ON) (at VGS=4.5V) < 6.3mΩ Applications 100% UIS Tested 100% Rg Tested • Synchronous Rectification for AC-DC Quick Charger D DFN5x6 Top View Top View Bottom View

4.1. aon6264e.pdf Size:347K _aosemi

AON6268
AON6268

AON6264E TM 60V N-Channel AlphaSGT General Description Product Summary VDS 60V • Trench Power AlphaSGTTM technology ID (at VGS=10V) 28A • Low RDS(ON) • Low Gate Charge RDS(ON) (at VGS=10V) < 9.5mΩ • ESD protected RDS(ON) (at VGS=4.5V) < 13.3mΩ Typical ESD protection HBM Class 2 Applications 100% UIS Tested 100% Rg Tested • High efficiency power supply

4.2. aon6260.pdf Size:262K _aosemi

AON6268
AON6268

AON6260 60V N-Channel MOSFET General Description Product Summary VDS The AON6260 uses trench MOSFET technology that is 60V uniquely optimized to provide the most efficient high ID (at VGS=10V) 85A frequency switching performance. Both conduction and RDS(ON) (at VGS=10V) < 2.4mΩ switching power losses are minimized due to an RDS(ON) (at VGS=4.5V) < 3.5mΩ extremely low combinati

 4.3. aon6266.pdf Size:368K _aosemi

AON6268
AON6268

AON6266 60V N-Channel AlphaMOS General Description Product Summary VDS • Trench Power AlphaMOS (αMOS MV) technology 60V • Low RDS(ON) ID (at VGS=10V) 30A • Low Gate Charge RDS(ON) (at VGS=10V) < 15mΩ • Optimized for fast-switching applications RDS(ON) (at VGS=4.5V) < 19mΩ Applications 100% UIS Tested 100% Rg Tested • Synchronus Rectification in DC/DC and AC/DC Con

4.4. aon6262e.pdf Size:334K _aosemi

AON6268
AON6268

AON6262E TM 60V N-Channel AlphaSGT General Description Product Summary VDS 60V • Trench Power AlphaSGTTM technology ID (at VGS=10V) 40A • Low RDS(ON) • Low Gate Charge RDS(ON) (at VGS=10V) < 6.2mΩ • ESD protected RDS(ON) (at VGS=4.5V) < 8.5mΩ Typical ESD protection HBM Class 2 Applications 100% UIS Tested 100% Rg Tested • High efficiency power supply •

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , 2N7002 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 
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